Patents by Inventor Jeffrey Craig Ramer

Jeffrey Craig Ramer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High electron mobility transistor with periodically carbon doped gallium nitride
    Patent number: 9608103
    Abstract: A method for forming a high electron mobility transistor (HEMT) device with a plurality of alternating layers of one or more undoped gallium nitride (GaN) layers and one or more carbon doped gallium nitride layers (c-GaN), and an HEMT device formed by the method is disclosed. In one embodiment, the method includes forming a channel layer stack on a substrate, the channel layer stack having a plurality of alternating layers of one or more undoped gallium nitride (GaN) layers and one or more carbon doped gallium nitride layers (c-GaN). The method further includes forming a barrier layer on the channel layer stack. In one embodiment, the channel layer stack is formed by growing each of the one or more undoped gallium nitride (GaN) layers in growth conditions that suppress the incorporation of carbon in gallium nitride, and growing each of the one or more carbon doped gallium nitride (c-GaN) layers in growth conditions that promote the incorporation of carbon in gallium nitride.
    Type: Grant
    Filed: October 2, 2014
    Date of Patent: March 28, 2017
    Assignee: Toshiba Corporation
    Inventors: Jeffrey Craig Ramer, Karl Knieriem
  • High Electron Mobility Transistor with Periodically Carbon Doped Gallium Nitride
    Publication number: 20160099345
    Abstract: A method for forming a high electron mobility transistor (HEMT) device with a plurality of alternating layers of one or more undoped gallium nitride (GaN) layers and one or more carbon doped gallium nitride layers (c-GaN), and an HEMT device formed by the method is disclosed. In one embodiment, the method includes forming a channel layer stack on a substrate, the channel layer stack having a plurality of alternating layers of one or more undoped gallium nitride (GaN) layers and one or more carbon doped gallium nitride layers (c-GaN). The method further includes forming a barrier layer on the channel layer stack. In one embodiment, the channel layer stack is formed by growing each of the one or more undoped gallium nitride (GaN) layers in growth conditions that suppress the incorporation of carbon in gallium nitride, and growing each of the one or more carbon doped gallium nitride (c-GaN) layers in growth conditions that promote the incorporation of carbon in gallium nitride.
    Type: Application
    Filed: October 2, 2014
    Publication date: April 7, 2016
    Inventors: Jeffrey Craig Ramer, Karl Knieriem