Patents by Inventor Jeffrey D Bruce
Jeffrey D Bruce has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11958279Abstract: A method of manufacturing an elastic film laminate includes stretching an elastic film in at least one direction at a first draw ratio, relaxing the elastic film, stretching the elastic film at least once more in the at least one direction at a second draw ratio less than the first draw ratio, and laminating the elastic film to at least one substrate web.Type: GrantFiled: November 21, 2017Date of Patent: April 16, 2024Assignee: FITESA FILM PRODUCTS LLCInventors: Stephen D. Bruce, Jeffrey A. Middlesworth
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Patent number: 11911039Abstract: A surgical stapler instrument includes a stapling head assembly that receives a plurality of staples. The staples are configured with features that allow the staples to expand after deployment so that an anastomosis created by the instrument can increase in size after forming. In some versions the staples expand automatically after deployment, and in other versions the staples expand in response to tissue forces imparted upon the staples after deployment. In some versions the staples are configured to be deployed in various patterns that promote expandability of the circular staple line.Type: GrantFiled: August 13, 2021Date of Patent: February 27, 2024Assignee: Cilag GmbH InternationalInventors: Chad P. Boudreaux, Jeffrey L. Aldridge, Nicholas M. Morgan, Michael J. Stokes, Marissa T. Kamenir, John K. Bruce, John S. Kimsey, Yvan D. Nguetio Tchoumkeu
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Patent number: 8147003Abstract: A wheel ornamentation that can fit vehicle wheels having different offset dimensions. According to one embodiment, the wheel ornamentation is a two-piece wheel cover that includes center and outer components and an adjustable overlapping junction therebetween, where the adjustable overlapping junction may be partially concealed by an annular flange on one of the components. An adhesive portion may be disposed between overlapping axial ends of the components and can be modified during assembly of the ornamentation to a vehicle wheel.Type: GrantFiled: April 13, 2010Date of Patent: April 3, 2012Assignee: Big Rapids Products, Inc.Inventor: Jeffrey D. Bruce
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Publication number: 20100283312Abstract: A wheel ornamentation that can fit vehicle wheels having different offset dimensions. According to one embodiment, the wheel ornamentation is a two-piece wheel cover that includes center and outer components and an adjustable overlapping junction therebetween, where the adjustable overlapping junction may be partially concealed by an annular flange on one of the components. An adhesive portion may be disposed between overlapping axial ends of the components and can be modified during assembly of the ornamentation to a vehicle wheel.Type: ApplicationFiled: April 13, 2010Publication date: November 11, 2010Applicant: BIG RAPIDS PRODUCTS, INC.Inventor: Jeffrey D. Bruce
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Patent number: 6882587Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: June 30, 2004Date of Patent: April 19, 2005Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20040240286Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: June 30, 2004Publication date: December 2, 2004Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6778452Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: June 27, 2003Date of Patent: August 17, 2004Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20040095822Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: June 27, 2003Publication date: May 20, 2004Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6682954Abstract: A method for upgrading or remediating semiconductor devices utilizing a remediation, adaptation, modification or upgrade chip in a piggyback configuration with a primary bare chip to achieve an upgrade, modification or adaptation of the primary chip or remedy a design or fabrication problem with the primary chip.Type: GrantFiled: January 31, 1997Date of Patent: January 27, 2004Assignee: Micron Technology, Inc.Inventors: Manny Kin F. Ma, Jeffrey D. Bruce
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Patent number: 6600687Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: September 23, 2002Date of Patent: July 29, 2003Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20030021171Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: September 23, 2002Publication date: January 30, 2003Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6469944Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: December 11, 2000Date of Patent: October 22, 2002Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6452846Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: December 8, 2000Date of Patent: September 17, 2002Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6445629Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: December 11, 2000Date of Patent: September 3, 2002Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6418071Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: December 11, 2000Date of Patent: July 9, 2002Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6353564Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: December 11, 2000Date of Patent: March 5, 2002Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20020018381Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: February 14, 2002Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6335888Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: December 11, 2000Date of Patent: January 1, 2002Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20010009522Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: July 26, 2001Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20010004333Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: June 21, 2001Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs