Abstract: A multi-wafer structure is formed by forming a cavity in a cap wafer and forming a first seal material around the cavity. A collapsible standoff structure is formed around the cavity. A movable mass is formed in a device wafer. A second seal material is formed around the movable mass. The first seal material and the second seal material are of materials that are able to form a eutectic bond at a eutectic temperature. The cap wafer and the device wafer are arranged so that the first and second seals are aligned but separated by the collapsible standoff structure. Gas is evacuated from the cavity at a temperature above the eutectic temperature using a low pressure. The temperature is lowered, the cap and device wafer are pressed together, and the temperature is raised above the eutectic temperature to form a eutectic bond with the first and second seal materials.

Abstract: A multi-wafer structure is formed by forming a cavity in a cap wafer and forming a first seal material around the cavity. A collapsible standoff structure is formed around the cavity. A movable mass is formed in a device wafer. A second seal material is formed around the movable mass. The first seal material and the second seal material are of materials that are able to form a eutectic bond at a eutectic temperature. The cap wafer and the device wafer are arranged so that the first and second seals are aligned but separated by the collapsible standoff structure. Gas is evacuated from the cavity at a temperature above the eutectic temperature using a low pressure. The temperature is lowered, the cap and device wafer are pressed together, and the temperature is raised above the eutectic temperature to form a eutectic bond with the first and second seal materials.

Abstract: A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer in the chamber, pressurizing the chamber, introducing gas into the chamber while the chamber is pressurized to accelerate a rate of one of a group consisting of the heating and the cooling, and applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer.

Abstract: A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer in the chamber, pressurizing the chamber, introducing gas into the chamber while the chamber is pressurized to accelerate a rate of one of a group consisting of the heating and the cooling, and applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer.