Patents by Inventor Jeffrey D. Peters

Jeffrey D. Peters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4595943
    Abstract: The current gain, beta, of a vertical transistor having an emitter formed in an epitaxial base on a substrate collector is reduced by forming a high impurity region of the conductivity type of the base at the base-collector boundary to increase the base width greater than the vertical distance between the emitter and collector. A plurality of vertical transistors having identical emitters and a common collector may be simultaneously fabricated with different current gains by individually selecting the horizontal dimensions of the buried high impurity regions.
    Type: Grant
    Filed: January 18, 1978
    Date of Patent: June 17, 1986
    Assignee: Harris Corporation
    Inventors: William R. Morcom, Jeffrey D. Peters
  • Patent number: 4333100
    Abstract: A silicon substrate integrated circuit having a layer of aluminum forming Schottky contacts with lightly doped N conductivity regions and silicon doped aluminum forming ohmic contacts to heavily doped N conductivity regions and forming interconnects between contacts.
    Type: Grant
    Filed: May 31, 1978
    Date of Patent: June 1, 1982
    Assignee: Harris Corporation
    Inventors: William R. Morcom, Hugh C. Nicolay, Jeffrey D. Peters