Abstract: A motor-winding driver circuit includes a high-side double-diffused metal-oxide-semiconductor (DMOS) field-effect transistor (FET) connected between a direct-current (DC) power supply node and a driver output node, and a low-side DMOS FET connected between the driver output node and ground. A high-side drive circuit and a low-side drive circuit regulate the driver output voltage to prevent a parasitic bipolar PNP transistor in the high-side FET from conducting, so that latchup is avoided. A parasitic N+/P-substrate diode in the low-side FET is also prevented from conducting. The low-side and high-side driver circuits have additional circuitry causing them to act as active clamp circuits during extreme over- or under-voltage conditions. A body-switching circuit connects the body of the high-side DMOS FET to the driver output node during normal operation, and connects the body to the DC supply node when the driver output voltage exceeds the DC source voltage.

Abstract: A controller for controlling a resonant switching dc to dc converter. The controller has four output terminals, each of which is capable of switching one of four transistors in a bridge power stage in such a way as to accomplish zero-voltage resonant switching. The phase relationship between the switching of the four transistors of the bridge power stage which is adjustable from approximately zero to 180.degree., results in highly-efficient, pulse-width-modulation of the output power.

Abstract: A transformer isolated circuit for driving a semiconductor power switch includes a transformer which is driven with a high frequency Pulse Width Modulated (PWM) signal in such a way that the constantly present PWM carrier supplies the power needed for high gate current pulses, while different duty cycles determine the "on" or "off" state of the power device under control. Transformer saturation is prevented by sensing primary current and returning it to zero once per PWM cycle. Because of the high PWM carrier frequency used, the average transformer power is low, yet the secondary side is able to deliver high pulse currents for fast "on-off" switching of the gate of even the largest N- or P-channel device, without need for auxiliary power supplies. Also included are provisions for extremely fast output current limiting, for use where short circuit protection is necessary. Discussion of a monolithic implementation is included.