Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.

Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.

Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.

Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.