Abstract: A method for preventing damage caused by high intensity light sources to optical components includes annealing the optical component for a predetermined period. Another method includes etching the optical component in an etchant including fluoride and bi-fluoride ions. The method also includes ultrasonically agitating the etching solution during the process followed by rinsing of the optical component in a rinse bath.

Abstract: A method for preventing damage caused by high intensity light sources to optical components includes annealing the optical component for a predetermined period. Another method includes etching the optical component in an etchant including fluoride and bi-fluoride ions. The method also includes ultrasonically agitating the etching solution during the process followed by rinsing of the optical component in a rinse bath.

Abstract: Methods and apparatus for treating wastewater are described, one method embodiment including the steps of flowing a mixed liquor suspended solids to a high rate clarification stage, forming a clarifier effluent, a first waste activated sludge stream, and a return waste activated sludge stream. The high rate clarifier effluent stream then flows to a membrane stage that includes a membrane media, producing a membrane reject (retentate) stream and a treated effluent (permeate) stream. Optionally, the methods include routing a screened raw wastewater to an anaerobic and/or aerated anoxic stage and introducing a gas comprising oxygen to the wastewater during the aerated anoxic stage, and optionally allowing the product of this stage to flow to an aeration stage prior to the high rate clarification stage.

Abstract: A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; (b) forming a first opening that extends to a first depth into the cladding region; (c) forming a smaller second opening, within the first opening, that extends to a second depth greater than the first depth and that exposes an underlying portion of the major surface of the single crystal body; (d) epitaxially growing regions of a second semiconductor material in each of the openings and on the top of the cladding region; (e) controlling the dimensions of the second opening so that defects are confined to the epitaxial regions grown within the second opening and on top of the cladding region, a first predetermined region being located within the first opening and being essentially free of defects; (D planarizing the top of the device to remove all

Abstract: A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; (b) forming a first opening that extends to a first depth into the cladding region; (c) forming a smaller second opening, within the first opening, that extends to a second depth greater than the first depth and that exposes an underlying portion of the major surface of the single crystal body; (d) epitaxially growing regions of a second semiconductor material in each of the openings and on the top of the cladding region; (e) controlling the dimensions of the second opening so that defects are confined to the epitaxial regions grown within the second opening and on top of the cladding region, a first predetermined region being located within the first opening and being essentially free of defects; (D planarizing the top of the device to remove all

Abstract: A semiconductor device in which hole-induced damage to the dielectric layer is reduced is disclosed. In the device, a layer of a conductive, high bandgap (i.e. a material with a bandgap greater than 1.1 eV) material is formed adjacent to the dielectric layer. The presence of the high bandgap material reduces the hole-induced damage to the dielectric layer that occurs during device operation compared to devices in which the conductive material adjacent to the dielectric is silicon.

Abstract: A method for programming and/or erasing an array of stacked gate memory devices such as EPROM and EEPROM devices in a NOR array is disclosed. In the method, either a program verify or an erase verify is performed intermittently with the programming of a device or the erasure of the array. During the program-verify, one of either a negative V.sub.CS is applied to the deselected devices in the array, a negative V.sub.BS is applied to both the selected and deselected devices in the array, or both conditions are applied. Performing the program verify or erase verify in this manner is efficient and accurate. During the programming step, it is also advantageous if one of either a negative V.sub.CS is applied to the deselected devices in the array, a negative V.sub.BS is applied to the selected devices in the array, or both. With the application of a negative V.sub.

Abstract: An integrated circuit includes at least one non-volatile memory element having first and second non-volatile transistors connected in series between first and second data lines. A junction between the first and second non-volatile transistors forms an output node. The non-volatile memory element further includes an access transistor connected between a reference voltage line and the junction between the first and second non-volatile transistors. In a programmable logic application, for example a field programmable gate array, the non-volatile memory element controls the state of a switching element, which selectively connects logic elements in the programmable logic application. Based on the voltages applied to the non-volatile memory element, the non-volatile memory element is selectively erased, programmed, operated, monitored and powered-up.

Abstract: A process for introducing negative charge onto the floating gate of an EPROM or EEPROM device is disclosed. The process uses CHISEL conditions to introduce charge onto the floating gate. The threshold voltage of the device is controlled by selecting a control gate voltage during programming that is less than 10 volts and that will provide a device with the desired threshold voltage. The device is then programmed using the selected control gate voltage and a negative substrate bias.

Abstract: The invention is directed to a memory cell with a floating gate and a method for charging the floating gate using channel-initiated secondary electron injection (CISEI). In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain and the source when introducing charge onto the floating gate. A negative bias voltage of about -0.5 volts or more negative is applied to the substrate and the source. The drain substrate bias induces a sufficient amount of secondary hot electrons to be formed with a sufficient amount of energy to overcome the energy barrier between the substrate and the floating gate to charge the floating gate.