Abstract: A light-emitting zinc oxide based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Mg1?x?yCdxZnyO; 0?x<1, 0<y?1, and x+y=0.1 to 1 compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type zinc oxide compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type zinc oxide based semiconductor having a composition different from the light-emitting layer.

Abstract: A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.

Abstract: A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.

Abstract: A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.

Abstract: The invention is directed to an apparatus, system and methods for growing high-purity crystals of substances that are peritectic at atmospheric pressure. The apparatus includes a pressure vessel that contains a pressurized gas. The apparatus also includes a cooling unit that is situated in the pressure vessel. The cooling unit receives a coolant flow from outside of the vessel, and has cooled surfaces that define an enclosure that receives the charge material. The apparatus further includes an inductive heating element situated in the vessel, that is coupled to receive electric power externally to the vessel. The element heats the interior portion of the charge material to form a molten interior portion contained by a relatively cool, exterior solid-phase portion of the charge material that is closer relative to the molten interior, to the cooled surfaces of the cooling unit.

Abstract: The invention is directed to an apparatus, system and methods for growing high-purity crystals of substances that are peritectic at atmospheric pressure using the Czochralski technique. The apparatus includes a pressure vessel that contains a pressurized gas. The apparatus also includes a cooling unit that is situated in the pressure vessel. The cooling unit receives a coolant flow from outside of the vessel, and has cooled surfaces that define an enclosure that receives the charge material. The apparatus further includes an inductive heating element situated in the vessel, that is coupled to receive electric power externally to the vessel. The element heats the interior portion of the charge material to form a molten interior portion contained by a relatively cool, exterior solid-phase portion of the charge material that is closer relative to the molten interior, to the cooled surfaces of the cooling unit.