Abstract: A magnetoresistance element deposited upon a substrate includes a first stack portion having opposing first and second surfaces and including a first plurality of layers. The first stack portion has a first substantially linear response corresponding to an applied magnetic field over a first magnetic field strength range. The magnetoresistance element also includes a second stack portion having opposing first and second surfaces and including a second plurality of layers. The first surface of the second stack portion is disposed over the second surface of the first stack portion and the second stack portion has a second substantially linear response that is different than the first substantially linear response. The second substantially linear response corresponds to the applied magnetic field over a second magnetic field strength range.

Abstract: A magnetic field sensor includes a substrate having a surface and a plurality of magnetoresistance elements supported by the surface of the substrate. Each magnetoresistance element has a respective width parallel to the surface, and each width may be a smallest dimension parallel to the surface. A first width of a first magnetoresistance element of the plurality of magnetoresistance elements may be different from a second width of a second magnetoresistance element of the plurality of magnetoresistance elements. A processing circuit may be coupled to the plurality of magnetoresistance elements to receive a signal representing a detected magnetic field from at least one of the magnetoresistance elements.

Abstract: Methods and apparatus for a magnetic field sensor for measuring movement of a target including a substrate and a magnet. A first bridge structure has first and second pluralities of magnetic field sensing elements spaced from each other. An axis of sensitivity of the magnetic field sensing elements is rotated at a predetermined angle with respect to an axis of rotation of the target to generate an output signal corresponding to the position of the target and a change in a property of the magnetic field generated by the magnet.

Abstract: A magnetic field sensor includes a substrate having a surface and a plurality of magnetoresistance elements supported by the surface of the substrate. Each magnetoresistance element has a respective width parallel to the surface, and each width may be a smallest dimension parallel to the surface. A first width of a first magnetoresistance element of the plurality of magnetoresistance elements may be different from a second width of a second magnetoresistance element of the plurality of magnetoresistance elements. A processing circuit may be coupled to the plurality of magnetoresistance elements to receive a signal representing a detected magnetic field from at least one of the magnetoresistance elements.

Abstract: Methods and apparatus for a sensor system having a first magnetic field sensing element with first and second segments where the first and second segments are located at positions to generate magnetic field bias in opposite directions for reducing sensitivity due to misalignment of the first and second segments. A processing module is configured to receive an output of the magnetic field sensing element.

Abstract: A magnetic field sensor includes a plurality of magnetoresistance elements, each having at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel. Illustrative characteristics selected to provide the respective responses include dimensions and/or construction parameters such as materials, layer thickness and order, and spatial relationship of the magnetoresistance element to the applied magnetic field. A method includes providing each of a plurality of magnetoresistance elements with at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel.

Abstract: A magnetoresistance element disposed upon a substrate can include a stack of layers. The stack of layers can include a first portion including a first bias layer structure for generating a first bias magnetic field with a first bias direction, and a first free layer structure disposed proximate to the first bias layer structure, wherein the first free layer structure is biased by the first bias magnetic field. The stack of layers can also include a second portion including a second bias layer structure for generating a second bias magnetic field with a second bias direction; and a second free layer structure disposed proximate to the second bias layer structure, wherein the second free layer structure is biased by the second bias magnetic field, and wherein the first bias direction and the second bias directions are opposite to each other.

Abstract: A method of determining an error condition in a magnetic field sensor can include receiving a first bridge signal, the first bridge signal generated by a first full bridge circuit. The method can also include receiving a second bridge signal, the second bridge signal generated by a second full bridge circuit. The method can also include determining a bridge separation from the first bridge signal and the second bridge signal. The method can also include comparing a function of the bridge separation to a threshold value. The method can also include generating an error signal indicative of the error condition or not indicative of the error condition in response to the comparing.

Abstract: A magnetic field sensor can sense a movement of an object along a path. A movement line is tangent to the path. The magnetic field sensor can include a semiconductor substrate. The semiconductor substrate can have first and second orthogonal axes orthogonal to each other on the first surface of the substrate. A projection of the movement line onto a surface of the semiconductor substrate is only substantially parallel to the first orthogonal axis. The magnetic field sensor can also include first, second, third, and fourth magnetic field sensing elements disposed on the substrate. The first and second magnetic field sensing elements have maximum response axes parallel to the first orthogonal axis and the second and fourth magnetic field sensing elements have maximum response axes parallel to the second orthogonal axis. Signals generated by the second and fourth magnetic field sensing elements can be used as reference signals.

Abstract: A magnetic field sensor includes a plurality of magnetoresistance elements, each having at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel. Illustrative characteristics selected to provide the respective responses include dimensions and/or construction parameters such as materials, layer thickness and order, and spatial relationship of the magnetoresistance element to the applied magnetic field. A method includes providing each of a plurality of magnetoresistance elements with at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel.

Abstract: A magnetoresistance element deposited upon a substrate includes a first stack portion having opposing first and second surfaces and including a first plurality of layers. The first stack portion has a first substantially linear response corresponding to an applied magnetic field over a first magnetic field strength range. The magnetoresistance element also includes a second stack portion having opposing first and second surfaces and including a second plurality of layers. The first surface of the second stack portion is disposed over the second surface of the first stack portion and the second stack portion has a second substantially linear response that is different than the first substantially linear response. The second substantially linear response corresponds to the applied magnetic field over a second magnetic field strength range.

Abstract: A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.

Abstract: A magnetic field sensor includes a plurality of magnetoresistance elements, each having at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel. Illustrative characteristics selected to provide the respective responses include dimensions and/or construction parameters such as materials, layer thickness and order, and spatial relationship of the magnetoresistance element to the applied magnetic field. A method includes providing each of a plurality of magnetoresistance elements with at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel.

Abstract: An integrated circuit includes at least one first magnetic field sensing element including at least one first magnetoresistance element configured to provide an output signal of the integrated circuit in response to a detected magnetic field. The integrated circuit also includes at least one second magnetic field sensing element including at least one second magnetoresistance element configured to have a characteristic indicative of a stress condition. A method for detecting a stress condition in an integrated circuit is also provided.

Abstract: A magnetic field sensor for detecting motion of an object includes a magnet configured to generate a magnetic field and having a first surface adjacent to the object and a second surface distal from the object. The first surface of the magnet has a centerline axis substantially parallel to and disposed on the first surface, and the centerline axis is diagonal with respect to a motion axis substantially parallel to and disposed on the first surface and parallel to which the object moves. The magnetic field sensor also includes a semiconductor substrate disposed between the magnet and the object, the semiconductor substrate supporting a plurality of spaced magnetoresistance elements disposed along a sensing element axis substantially parallel to the centerline axis of the magnet and configured to generate a respective plurality of magnetic field signals in response to the motion of the object with respect to magnetic field.

Abstract: A magnetic field sensor for detecting motion of an object includes a magnet configured to generate a magnetic field and having a first surface adjacent to the object and a second surface distal from the object. The first surface of the magnet has a centerline axis substantially parallel to and disposed on the first surface, and the centerline axis is diagonal with respect to a motion axis substantially parallel to and disposed on the first surface and parallel to which the object moves. The magnetic field sensor also includes a semiconductor substrate disposed between the magnet and the object, the semiconductor substrate supporting a plurality of spaced magnetoresistance elements disposed along a sensing element axis substantially parallel to the centerline axis of the magnet and configured to generate a respective plurality of magnetic field signals in response to the motion of the object with respect to magnetic field.

Abstract: Magnetic field sensors can sense speed of movement and direction of movement of a ferromagnetic object. Particular arrangements of magnetic field sensing elements within the magnetic field sensor can automatically cancel offset variations in the magnetic field sensing elements.

Abstract: An integrated circuit includes at least one first magnetic field sensing element including at least one first magnetoresistance element configured to provide an output signal of the integrated circuit in response to a detected magnetic field. The integrated circuit also includes at least one second magnetic field sensing element including at least one second magnetoresistance element configured to have a characteristic indicative of a stress condition. A method for detecting a stress condition in an integrated circuit is also provided.

Abstract: A magnetic field sensor includes a plurality of magnetoresistance elements, each having at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel. Illustrative characteristics selected to provide the respective responses include dimensions and/or construction parameters such as materials, layer thickness and order, and spatial relationship of the magnetoresistance element to the applied magnetic field. A method includes providing each of a plurality of magnetoresistance elements with at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel.

Abstract: A magnetic field sensor operates as a motion detector for sensing a movement of a ferromagnetic target object having features. The magnetic field sensor has a plurality of magnetoresistance elements to generate, in a first channel, a feature signal indicative of a proximity of a feature of a ferromagnetic target object and, in a second channel, an edge signal indicative of a proximity of an edge of a feature of a ferromagnetic target object.