Abstract: A system and method for annealing a target substrate such as a semiconductor using industrial microwave heating and parallel plate reaction. Using a uniform microwave field, with the target substrate located between parallel plates controls application of eddy currents to the target substrate. The system may include a uniform microwave field generator, support elements, two plates held in parallel to each other, and a turntable device configured to rotate the two plates and the target substrate within the uniform microwave field. The rotating of the plates and target substrate in the uniform microwave field creates a periodic change in polarity of the microwaves applied to the target substrate. The eddy currents in the uniform microwave field react by flowing perpendicular to the plates, and not parallel to the surface as in traditional microwave reactions of metals. This redirection of the eddy currents provides even heating of the target substrate.

Abstract: Systems and methods of forming a thin film on substrate includes positioning the substrate in a chamber; generating, via a uniform microwave field generator, a microwave field around the substrate; and guiding radicals into the chamber so that plasma is generated about the substrate to form the thin film on the substrate.

Abstract: An apparatus for annealing semiconductor integrated circuit wafers comprises a microwave energy source and a reactor housing. The microwave energy source is configured to generate microwave radiation having a first wavelength. The reactor housing is configured to receive a plurality of semiconductor integrated circuit wafers simultaneously. The reactor housing includes a top wall, a bottom wall, a left side wall, a right side wall, a front wall, and a back wall connected to one another to form a box-shaped internal chamber. Each wall is electrically connected to electrical ground and is water cooled. The walls of the internal chamber are spaced apart such that the microwave radiation forms a single mode within the internal chamber.

Abstract: A system and method for annealing a target substrate such as a semiconductor using industrial microwave heating and parallel plate reaction. Using a uniform microwave field, with the target substrate located between parallel plates controls application of eddy currents to the target substrate. The system may include a uniform microwave field generator, support elements, two plates held in parallel to each other, and a turntable device configured to rotate the two plates and the target substrate within the uniform microwave field. The rotating of the plates and target substrate in the uniform microwave field creates a periodic change in polarity of the microwaves applied to the target substrate. The eddy currents in the uniform microwave field react by flowing perpendicular to the plates, and not parallel to the surface as in traditional microwave reactions of metals. This redirection of the eddy currents provides even heating of the target substrate.

Abstract: A system and method for annealing a target substrate such as a semiconductor using industrial microwave heating and parallel plate reaction. Using a uniform microwave field, with the target substrate located between parallel plates controls application of eddy currents to the target substrate. The system may include a uniform microwave field generator, support elements, two plates held in parallel to each other, and a turntable device configured to rotate the two plates and the target substrate within the uniform microwave field. The rotating of the plates and target substrate in the uniform microwave field creates a periodic change in polarity of the microwaves applied to the target substrate. The eddy currents in the uniform microwave field react by flowing perpendicular to the plates, and not parallel to the surface as in traditional microwave reactions of metals. This redirection of the eddy currents provides even heating of the target substrate.

Abstract: A system and method for annealing a target substrate such as a semiconductor using industrial microwave heating and parallel plate reaction. Using a uniform microwave field, with the target substrate located between parallel plates controls application of eddy currents to the target substrate. The system may include a uniform microwave field generator, support elements, two plates held in parallel to each other, and a turntable device configured to rotate the two plates and the target substrate within the uniform microwave field. The rotating of the plates and target substrate in the uniform microwave field creates a periodic change in polarity of the microwaves applied to the target substrate. The eddy currents in the uniform microwave field react by flowing perpendicular to the plates, and not parallel to the surface as in traditional microwave reactions of metals. This redirection of the eddy currents provides even heating of the target substrate.

Abstract: A system for and method of processing, i.e., annealing semiconductor materials. By controlling the time, frequency, variance of frequency, microwave power density, wafer boundary conditions, ambient conditions, and temperatures (including ramp rates), it is possible to repair localized damage lattices of the crystalline structure of a semiconductor material that may occur during the ion implantation of impurities into the material, electrically activate the implanted dopant, and substantially minimize further diffusion of the dopant into the silicon. The wafer boundary conditions may be controlled by utilizing susceptor plates (4) or a water chill plate (12). Ambient conditions may be controlled by gas injection (10) within the microwave chamber (3).

Abstract: A system for and method of processing, i.e., annealing semiconductor materials. By controlling the time, frequency, variance of frequency, microwave power density, wafer boundary conditions, ambient conditions, and temperatures (including ramp rates), it is possible to repair localized damage lattices of the crystalline structure of a semiconductor material that may occur during the ion implantation of impurities into the material, electrically activate the implanted dopant, and substantially minimize further diffusion of the dopant into the silicon. The wafer boundary conditions may be controlled by utilizing susceptor plates (4) or a water chill plate (12). Ambient conditions may be controlled by gas injection (10) within the microwave chamber (3).