Abstract: A method for activating a getter at low temperature for encapsulation in a device cavity containing a microdevice comprises etching a passivation layer off the getter material while the device wafer and lid wafer are enclosed in a bonding chamber. A plasma etching process may be used, wherein by applying a large negative voltage to the lid wafer, a plasma is formed in the low pressure environment within the bonding chamber. The plasma then etches the passivation layer from the getter material, which is directly thereafter sealed within the device cavity of the microdevice, all within the etching/bonding chamber.

Abstract: Systems and methods for forming an electrostatic MEMS switch include forming a cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.

Abstract: A method for activating a getter at low temperature for encapsulation in a device cavity containing a microdevice comprises etching a passivation layer off the getter material while the device wafer and lid wafer are enclosed in a bonding chamber. A plasma etching process may be used, wherein by applying a large negative voltage to the lid wafer, a plasma is formed in the low pressure environment within the bonding chamber. The plasma then etches the passivation layer from the getter material, which is directly thereafter sealed within the device cavity of the microdevice, all within the etching/bonding chamber.