Abstract: Provided herein are methods and compositions for community-based screening of polymicrobial infections for the selection and administration of antibiotics and antibiotic combinations for treating infections associated with diseases such as cystic fibrosis, chronic obstructive pulmonary disease, and chronic sinus infections. The methods and compositions of this disclosure are advantageous in the sense that antibiotic effectiveness is assessed with respect to a community of microbes rather than a single microbial population, thus reflecting more accurately the in vivo disease environment and enabling the identification of beneficial antimicrobial therapeutics even when the primary bacterial strain shows antibiotic resistance.

Abstract: An electronic device structure comprises a substrate layer of semi-insulating AlxGayInzN, a first layer comprising AlxGayInzN, a second layer comprising Alx?Gay?Inz?N, and at least one conductive terminal disposed in or on any of the foregoing layers, with the first and second layers being adapted to form a two dimensional electron gas is provided. A thin (<1000 nm) III-nitride layer is homoepitaxially grown on a native semi-insulating III-V substrate to provide an improved electronic device (e.g., HEMT) structure.

Abstract: A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 ?m2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm?2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

Abstract: The present invention relates to various switching device structures including Schottky diode (10), P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers (16) of low dopant concentration (<1E16 cm?3) grown on a conductive GaN layer (14). The devices enable substantially higher breakdown voltage on hetero-epitaxial substrates (<2 KV) and extremely high breakdown voltage on homo-epitaxial substrates (>2 KV).

Abstract: A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominantly toward a direction selected from the group consisting of <10-10> and <11-20> directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 ?m2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm?2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

Abstract: A painting system includes a paint spray booth ventilated by process air including a combination of outside make-up air and a portion of the exiting process air which is returned to the booth, the returned air being the main component of the combination. The humidity of the air in the paint spray booth is controlled by routing a first minor portion of the process air, exiting the booth, through a desiccant dehumidifier, which removes moisture and volatile organic compounds (VOCs) from this process air portion before it is sent back to the paint spray booth. The dehumidifier is designed so that at any given time the process air portion contacts only part of the desiccant bed while air heated to approximately 250.degree. F. in a paint cure oven is exhausted from the oven and directed through the remaining part of the desiccant bed in order to dry, and thus regenerate, the desiccant for continued use.