Patents by Inventor Jeffrey Fournier

Jeffrey Fournier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrically rewritable non-volatile memory element and method of manufacturing the same
    Publication number: 20070164267
    Abstract: A non-volatile memory element comprises a bottom electrode 12; a top electrode 15; and a recording layer 13 containing phase change material and a block layer 14 that can block phase change of the recording layer 13, provided between the bottom electrode 12 and the top electrode 15. The block layer 14 is constituted of material having an electrical resistance that is higher than that of material constituting the recording layer 13. The block layer 14 suppresses the radiation of heat towards the top electrode 15 and greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrode 15 itself can be used to constitute a bit line, or a separate bit line can be provided.
    Type: Application
    Filed: January 19, 2006
    Publication date: July 19, 2007
    Inventors: Isamu Asano, Natsuki Sato, Wolodymyr Czubatyj, Jeffrey Fournier
  • Vapor deposition of semiconductor material
    Patent number: 4698234
    Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
    Type: Grant
    Filed: October 17, 1986
    Date of Patent: October 6, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Subhendu Guha, Prem Nath, Chi C. Yang, Jeffrey Fournier, James Kulman
  • Gas mixtures for the vapor deposition of semiconductor material
    Patent number: 4696758
    Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
    Type: Grant
    Filed: October 6, 1986
    Date of Patent: September 29, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Subhendu Guha, Prem Nath, Chi Chung Yang, Jeffrey Fournier, James Kulman
  • Gas mixtures for the vapor deposition of semiconductor material
    Patent number: 4637895
    Abstract: Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
    Type: Grant
    Filed: April 1, 1985
    Date of Patent: January 20, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Subhendu Guha, Prem Nath, Chi C. Yang, Jeffrey Fournier, James Kulman