Patents by Inventor Jeffrey G. Cederberg

Jeffrey G. Cederberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction
    Patent number: 9029239
    Abstract: A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: May 12, 2015
    Assignee: Sandia Corporation
    Inventors: Anna Tauke-Pedretti, Gregory N. Nielson, Jeffrey G. Cederberg, Jose Luis Cruz-Campa
  • SEPARATING SEMICONDUCTOR DEVICES FROM SUBSTRATE BY ETCHING GRADED COMPOSITION RELEASE LAYER DISPOSED BETWEEN SEMICONDUCTOR DEVICES AND SUBSTRATE INCLUDING FORMING PROTUBERANCES THAT REDUCE STICTION
    Publication number: 20140048123
    Abstract: A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.
    Type: Application
    Filed: October 30, 2013
    Publication date: February 20, 2014
    Applicant: Sandia Corporation
    Inventors: Anna Tauke-Pedretti, Gregory N. Nielson, Jeffrey G. Cederberg, Jose Luis Cruz-Campa