Patents by Inventor Jeffrey G. Mansmann

Jeffrey G. Mansmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power VDMOSFET with schottky on lightly doped drain of lateral driver FET
    Patent number: 5164802
    Abstract: A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower doping concentration than that of the first and second main electrodes of the VDMOS transistor for forming a Schottky barrier diode.
    Type: Grant
    Filed: March 20, 1991
    Date of Patent: November 17, 1992
    Assignee: Harris Corporation
    Inventors: Frederick P. Jones, Joseph A. Yedinak, John M. S. Neilson, Robert S. Wrathall, Jeffrey G. Mansmann, Claire E. Jackoski
  • Integrated circuit power timer
    Patent number: 4703390
    Abstract: An integrated circuit power timer having a power field effect transistor and a versatile timing circuit all on one integrated circuit is provided. The integrated circuit has built in thermal and current limit protection and provides a fault indicator in case of an over current or an over temperature condition.
    Type: Grant
    Filed: May 27, 1986
    Date of Patent: October 27, 1987
    Assignee: Motorola, Inc.
    Inventors: Gary Fay, Jeffrey G. Mansmann, Keith M. Wellnitz
  • Integrated circuit speed controller
    Patent number: 4667121
    Abstract: A speed control circuit made by using CMOS processes is capable of handling high voltage and high current loads. The output of the speed control circuit is provided by a power field effect transistor. Current sensing means are provided to generate a fault signal in case an over current condition occurs. The junction temperature of the power field effect transistor is also monitored to provide an over temperature condition if the temperature of the junction of the power field effect transistor exceeds a predetermined value. A ramping generator is used to set a latch which controls the operation of the power field effect transistor. A speed control signal is compared against the ramping signal provided by the ramp generator and resets the latch in order to provide speed control.
    Type: Grant
    Filed: May 27, 1986
    Date of Patent: May 19, 1987
    Assignee: Motorola, Inc.
    Inventors: Gary Fay, Jeffrey G. Mansmann, Keith M. Wellnitz
  • MOSFET "H" switch with current sensing
    Patent number: 4654568
    Abstract: Current sensing of current through an "H" switch circuit is accomplished without the use of a dropping resistor. The current sensing is provided by using current sensing field effect transistors in conjunction with power field transistors.
    Type: Grant
    Filed: August 21, 1986
    Date of Patent: March 31, 1987
    Assignee: Motorola, Inc.
    Inventor: Jeffrey G. Mansmann
  • High voltage MOS SCR and power MOSFET "H" switch circuit for a DC motor
    Patent number: 4649326
    Abstract: An MOS SCR and MOSFET "H" switch circuit for a DC motor is provided which allows for the use of a supply voltage of greater than 20 volts by clamping the gate-to-cathode voltage of the SCR's used therein to a predetermined value which is less than the gate-to-cathode breakdown voltage of said SCR's.
    Type: Grant
    Filed: June 30, 1986
    Date of Patent: March 10, 1987
    Assignee: Motorola Inc.
    Inventors: Jeffrey G. Mansmann, Philip W. McEntarfer