Abstract: A system for cleaning a substrate includes a carrier and a cleaning station. The carrier is capable of holding the substrate and is movably coupled to a pair of guide tracks extending a length of the system. The cleaning station includes a force applicator, a gate and a dispenser. The force applicator has an applicator length and is coupled to the cleaning station, is rotatable and is adjustable to a first height off the surface of the carrier during cleaning. The gate is a hollow structure disposed at a trailing edge of the force applicator. The gate is set to a height off the carrier surface that is less than or equal to the first height. The gate includes a gate length that at least spans the applicator length. The dispenser is disposed at a leading edge of the force applicator and is configured to supply cleaning solution during cleaning.

Abstract: A system for cleaning a substrate includes a carrier and a cleaning station. The carrier is capable of holding the substrate and is movably coupled to a pair of guide tracks extending a length of the system. The cleaning station includes a force applicator and a gate. The force applicator has an applicator length and is operatively coupled to the cleaning station. The force applicator is rotatable and is adjusted to a first height off the surface of the carrier as the substrate is being cleaned. The force applicator has a hollow structure with internal channels and openings dispersed throughout the applicator length to dispense cleaning solution to substrate surface. The gate is affixed to a trailing edge of the force applicator and is set to a second height off the surface of the carrier. The gate includes a gate length that at least spans the applicator length.

Abstract: A system for cleaning a substrate includes a carrier and a cleaning station. The carrier is capable of holding the substrate and is movably coupled to a pair of guide tracks extending a length of the system. The cleaning station includes a force applicator and a gate. The force applicator has an applicator length and is operatively coupled to the cleaning station. The force applicator is rotatable and is adjusted to a first height off the surface of the carrier as the substrate is being cleaned. The force applicator has a hollow structure with internal channels and openings dispersed throughout the applicator length to dispense cleaning solution to substrate surface. The gate is affixed to a trailing edge of the force applicator and is set to a second height off the surface of the carrier. The gate includes a gate length that at least spans the applicator length.

Abstract: An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.

Abstract: An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height to off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.

Abstract: An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.

Abstract: In an example embodiment, a wet system includes a proximity head and a holder for substrate (e.g., a semiconductor wafer). The proximity head is configured to cause a flow of an aqueous fluid in a meniscus across a surface of the proximity head. The surface of the proximity head interfaces with a surface of a substrate through the flow. The surface of the head is composed of a non-reactive material (e.g., thermoplastic) with modifications as to surface topography that confine, maintain, and/or facilitate the flow. The modifications as to surface topography might be inscribed on the surface with a conical scribe (e.g., with a diamond or SiC tip) or melt printed on the surface using a template. These modifications might produce hemi-wicking or superhydrophobicity. The holder exposes the surface of the substrate to the flow.

Abstract: An apparatus for processing a substrate is provided. The apparatus includes a plating head configured to plate a surface of the substrate with a layer of a material using a fluid meniscus between the plating head and a surface of the substrate. The apparatus also includes a fluid meniscus stabilizing apparatus configured to apply a pre-processing fluid to the surface of the substrate before the fluid meniscus is applied to the surface.

Abstract: A brush core for use in cleaning a substrate is provided. The brush core includes an elongated cylinder having a first end and a second end. The first end of the elongated cylinder is configured to receive a drive hub. The second end is configured to receive fluid into an inner cavity of the elongated cylinder. The inner cavity is configured to distribute fluid to a plurality of fluid channels having a first diameter. The plurality of fluid channels are configured to distribute the fluid to corresponding distribution holes having a second diameter. The brush core further including a plurality of non-fluid distributing pockets defined on the outer surface. The corresponding distribution holes and plurality of non-fluid distributing pockets are configured so that a thickness of a solid portion of the brush core is substantially similar. In one embodiment, the first diameter is less than the second diameter.

Abstract: A system for producing bubble free liquid includes a continuous liquid source and a de-bubbling chamber. The de-bubbling chamber includes an outlet and an inlet. The inlet coupled to an outlet of the continuous liquid source by a supply pipe. The de-bubbling chamber also includes at least one port in a sidewall of the de-bubbling chamber. The at least one port being at least a length L from the inlet of the de-bubbling chamber. A method for producing bubble free liquid is also described.

Abstract: A method and system are provided for cleaning a surface of a semiconductor wafer following a fabrication operation. The system includes a brush box, which has a fluid manifold and at least one nozzle. The nozzle is connected to the fluid manifold by a flexible conduit. The nozzle is configured to spray a liquid onto the surface of the wafer at an application angle and at a fan angle. The application angle is defined between a plane of the surface of the wafer and a spraying plane of the liquid. The fan angle and the application angle are configured such that the spraying liquid covers the surface of the wafer in a quiescent manner.

Abstract: A method and system are provided for cleaning a surface of a semiconductor wafer following a plasma etching operation. The method is preferably performed inside a brush box and involves wetting the surface of the semiconductor wafer by using a non-splash rinse technique. The non-splash rinse technique is configured to quickly and evenly saturate the surface of the semiconductor wafer with a liquid (preferably de-ionized water). The wetting will therefore remove unwanted residues that could otherwise further cause stains or scratches on the wafer surface. Following the wetting operation, the surface of the wafer may be finely scrubbed with a cleaning brush that applies a chemical solution to the surface of the wafer. A second cleaning brush may also be implemented so that both the top and the bottom surfaces of the wafer may be finely scrubbed.

Abstract: A method for post plasma etch cleaning a semiconductor wafer is provided. The semiconductor wafer has a plurality of layers formed thereon, and one of the plurality of layers is an oxide layer that has an overlying photoresist mask. The method includes plasma etching a via feature in the oxide layer. The plasma etching is configured to generate a polymer film on sidewalls of the via feature. An ashing operation is then performed to remove the photoresist mask. The method then moves to brush scrubbing the oxide layer and the via feature defined in the oxide layer with first chemicals in a first brush station. Brush scrubbing the oxide layer and the via feature follows with DI water in the first brush station. Then, the oxide layer and the via feature are brush scrubbed with second chemicals in a second brush station. In the same second brush station, the oxide layer and the via feature are scrubbed with DI water.