Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and a window incorporated into the polishing layer; wherein the polishing layer comprises a reaction product of ingredients, including: a polishing layer prepolymer and a polishing layer curative system; wherein the polishing layer curative system includes a polishing layer amine initiated polyol curative, a polishing layer high molecular weight polyol curative and a polishing layer difunctional curative; and, wherein the window comprises a reaction product of ingredients, including: a window prepolymer and a window curative system; wherein the window curative system includes a window difunctional curative, a window amine initiated polyol curative and a window high molecular weight polyol curative; and, wherein the polishing layer exhibits a density of ?0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr.

Abstract: A chemical mechanical polishing pad (104, 400) that includes a polishing layer (108, 420, 500) having a set of primary grooves (124, 408, 516) formed in a polishing surface (110, 428, 520) of the pad. The pad also includes a set of secondary grooves (128, 404, 504) that become selectively active as a function of the wear of the polishing layer from polishing.

Abstract: Chemical mechanical polishing pads having an electrospun polishing layer are provided, wherein the electrospun polishing layer has a polishing surface that is adapted for polishing a semiconductor substrate. Also provided are methods of making such chemical mechanical polishing pads and for using them to polish semiconductor substrates.

Abstract: A polishing pad (104) having an annular polishing track (122) and including a plurality of grooves (148) that each traverse the polishing track. Each groove includes a plurality of flow control segments (CS1–CS3) and at least two discontinuities in slope (D1, D2) located within the polishing track.

Abstract: A method of polishing a surface (120) of an article, e.g., a semiconductor wafer (112, 212), using a polishing layer (108, 208) in the presence of a polishing medium, such as a slurry (116). The method includes selecting the rotational rate of the article or the velocity of the polishing layer, or both, so as to control either removal rate uniformity or the occurrence of defects on the polished surface, or both.

Abstract: A polishing pad having a soft layer with a porous structure impregnated with a relatively hard material that locally deforms irreversibly under polishing pressure to a substantially flat polishing pad surface.

Abstract: A system and method for semiconductor processing using magnetorheological finishing (MRF) includes polishing of semiconductor substrates, ceramic bodies and glass lithography masks, to a high degree of flatness by the abrasive action of a magnetorheological fluid flowing in a magnetic field.

Abstract: A polishing pad having a soft layer with a porous structure impregnated with a relatively hard material that locally deforms irreversibly under polishing pressure to a substantially flat polishing pad surface.