Abstract: The techniques described herein relate to a method for etching an ashable hard mask (AHM) on a substrate. The method includes forming a plasma from a gas mixture, wherein the gas mixture includes hydrogen peroxide vapor with a concentration greater than 0.1% by volume, wherein the concentration of the hydrogen peroxide vapor in the gas mixture is substantially stable over time, and wherein the plasma comprises hydrogen peroxide species. The method further includes etching the AHM by exposing the AHM to the plasma.

Abstract: The present disclosure relates to gas recovery systems and methods, and systems including gas recovery systems. In some embodiments, a gas recovery system includes a gas inlet, a compressor, a buffer tank, a variable speed microturbine, one or more sensors, and a control system. A gas input into the gas inlet can be output from a processing tool, and the gas can include hydrogen or ammonia gas. The gas can be used to produce electrical power using the first variable speed microturbine. The sensor, for example, a gas analyzer, a flow meter, or a pressure sensor, can be between the gas inlet and the variable speed microturbine. The control system can be configured to control a speed of the variable speed microturbine in response to a measurement from the sensor.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Provided herein are methods, systems, and device for control, delivery, and purification of low vapor pressure gases in conjunction with carrier gas in micro-electronics and other critical process applications. The present invention is based on the observation that when temperature and pressure of a device for delivering a gas stream are held constant, the concentration of vapor in the gas stream may be modulated based on the level of liquid within the chamber thereof.

Abstract: The present disclosure provides techniques for suppression of hydrogen degradation. In some embodiments, a method for decreasing an amount or rate of hydrogen degradation of a material, includes: (a) exposing a material to gaseous hydrogen peroxide; and (b) forming a hydroxyl layer on the surface of the material within a chamber. The hydroxyl layer can decrease an amount or rate of hydrogen degradation of the material when exposed to hydrogen. In some embodiments, a system includes: a chamber; a material within the chamber; an inlet to the chamber; a hydrogen peroxide source coupled to the inlet via a conduit; and an outlet from the chamber for removing species from the chamber. The system can be configured to perform the method for decreasing an amount or rate of hydrogen degradation of a material.

Abstract: The present disclosure provides techniques for suppression of hydrogen degradation. In some embodiments, a method for decreasing the amount or rate of hydrogen degradation of a material, includes: (a) exposing a material to gaseous hydrogen peroxide; (b) forming a hydroxyl layer on the surface of the material within a chamber; and (c) after forming the hydroxyl layer, exposing the material to hydrogen during a controlled process or application.

Abstract: The present disclosure provides techniques for suppression of hydrogen degradation. In some embodiments, a method for decreasing the amount or rate of hydrogen degradation of a material, includes: (a) exposing a material to gaseous hydrogen peroxide; (b) forming a hydroxyl layer on the surface of the material within a chamber; and (c) after forming the hydroxyl layer, exposing the material to hydrogen during a controlled process or application.

Abstract: Provided herein are methods, systems, and apparatus for measuring and/or controlling mass flow/concentration of a catalytically reactive gas within a mixed gas stream by determining thermal rise due to decomposition.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Provided herein are methods, systems, and device for control, delivery, and purification of low vapor pressure gases in conjunction with carrier gas in micro-electronics and other critical process applications. The present invention is based on the observation that when temperature and pressure of a device for delivering a gas stream are held constant, the concentration of vapor in the gas stream may be modulated based on the level of liquid within the chamber thereof.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Provided herein are methods, systems, and devices incorporating use of materials to store, ship, and deliver process gases to micro-electronics fabrication processes and other critical process applications.

Abstract: Compositions, methods, devices, and systems for purifying a source liquid from a replenishment stock solution that includes stabilizing agents, such as metal ions, prior to vaporization. Certain embodiments effect the purification with a solid perfluoronated ionomer, such as a perfluoronated ionomer membrane. Advantageously, source liquids purified in this manner provide feed stocks for production of ultra-pure gaseous reagents. As well, performance characteristics of membrane-based vaporizers relying on transport processes are improved.

Abstract: Provided herein are methods, systems, and apparatus for measuring and/or controlling mass flow/concentration of a catalytically reactive gas within a mixed gas stream by determining thermal rise due to decomposition.

Abstract: A method and chemical delivery system are provided for low temperature atomic layer deposition. Thus, methods of forming nitrogen-containing thin films by atomic layer deposition using a substantially water free hydrazine gas and plasma treatment are provided.

Abstract: Provided herein is a device for removing residual hydrogen peroxide or hydrazine from an effluent gas stream which includes a metal oxide scrubber material configured to react with residual process gases under increased temperatures. Also provided are systems and methods of using the same.

Abstract: A method and chemical delivery system and device are provided. One method useful in the present invention includes contacting a non-aqueous hydrazine solution with a carrier gas and/or vacuum and delivering a gas stream comprising hydrazine to a critical process or application. One chemical delivery system and device useful in the present invention includes a non-aqueous hydrazine solution having a vapor phase that is in contact with a process carrier gas and/or vacuum. One device useful in the present invention includes a chamber for containing a liquid comprising at least one volatile process chemical, such as a non-aqueous hydrazine solution, a hydrogen peroxide solution, or another suitable process chemical, in fluid communication with a permeable or semi-permeable membrane from which the volatile process chemical can be drawn using a carrier gas and/or vacuum.

Abstract: Provided herein are methods, systems, and devices for the vapor phase delivery of high purity process gases to a critical process or application.