Patents by Inventor Jeffrey L. Dittmar

Jeffrey L. Dittmar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Embedded carbon-doped germanium as stressor for germanium nFET devices
    Patent number: 9768262
    Abstract: Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (GeH3—CH3) as the carbon source. The carbon-doped germanium stressor regions that are provided yield more strain in less volume since a carbon atom is much smaller than a silicon atom.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: September 19, 2017
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey L. Dittmar, Keith E. Fogel, Sebastian Naczas, Alexander Reznicek, Devendra K. Sadana
  • EMBEDDED CARBON-DOPED GERMANIUM AS STRESSOR FOR GERMANIUM nFET DEVICES
    Publication number: 20160343807
    Abstract: Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (GeH3—CH3) as the carbon source. The carbon-doped germanium stressor regions that are provided yield more strain in less volume since a carbon atom is much smaller than a silicon atom.
    Type: Application
    Filed: August 4, 2016
    Publication date: November 24, 2016
    Inventors: Jeffrey L. Dittmar, Keith E. Fogel, Sebastian Naczas, Alexander Reznicek, Devendra K. Sadana
  • Embedded carbon-doped germanium as stressor for germanium nFET devices
    Patent number: 9419138
    Abstract: Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (GeH3—CH3) as the carbon source. The carbon-doped germanium stressor regions that are provided yield more strain in less volume since a carbon atom is much smaller than a silicon atom.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: August 16, 2016
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey L. Dittmar, Keith E. Fogel, Sebastian Naczas, Alexander Reznicek, Devendra K. Sadana
  • EMBEDDED CARBON-DOPED GERMANIUM AS STRESSOR FOR GERMANIUM nFET DEVICES
    Publication number: 20160093735
    Abstract: Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (GeH3—CH3) as the carbon source. The carbon-doped germanium stressor regions that are provided yield more strain in less volume since a carbon atom is much smaller than a silicon atom.
    Type: Application
    Filed: September 29, 2014
    Publication date: March 31, 2016
    Inventors: Jeffrey L. Dittmar, Keith E. Fogel, Sebastian Naczas, Alexander Reznicek, Devendra K. Sadana