Patents by Inventor Jeffrey L. Fenton, JR.

Jeffrey L. Fenton, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160155886
    Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
    Type: Application
    Filed: February 4, 2016
    Publication date: June 2, 2016
    Inventors: Todd R. Bryden, Jeffrey L. Fenton, JR., Gary E. Mitchell, Kirk R. Thompson, Michael E. Mills, David J. Parrillo
  • Patent number: 9356177
    Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: May 31, 2016
    Assignee: Dow Global Technologies LLC
    Inventors: Todd R. Bryden, Jeffrey L. Fenton, Jr., Gary E. Mitchell, Kirk R. Thompson, Michael E. Mills, David J. Parrillo
  • Publication number: 20160149069
    Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
    Type: Application
    Filed: November 23, 2015
    Publication date: May 26, 2016
    Inventors: Todd R. Bryden, Jeffrey L. Fenton, JR., Gary E. Mitchell, Kirk R. Thompson, Michael E. Mills, David J. Parrillo
  • Patent number: 9011591
    Abstract: Compositions for use in microelectronic applications: Ra comprises one or more multiple bonds, provided that, if Ra comprises more than one multiple bond, these multiple bonds are not in a conjugated configuration; and R1, R2, R3 are independently selected from alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rb is selected from H or a saturated group comprising alkyl, alkylene, or alkylidene; and R4, R5, R6 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rc comprises more than one multiple bond, and these multiple bonds are in a conjugated configuration; and R7, R8, R9 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and R10, R11, R12, R13 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: April 21, 2015
    Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Yuanqiao Rao, Robert L. Auger, John D. Weaver, Paul J. Popa, Roxanne M. Jenkins, Christopher P. Sullivan, Jessica P. Evans, Cecilia W. Kiarie, Yasmin N. Srivastava, Jeffrey L. Fenton, Jr.
  • Publication number: 20130071560
    Abstract: Compositions for use in microelectronic applications: Ra comprises one or more multiple bonds, provided that, if Ra comprises more than one multiple bond, these multiple bonds are not in a conjugated configuration; and R1, R2, R3 are independently selected from alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rb is selected from H or a saturated group comprising alkyl, alkylene, or alkylidene; and R4, R5, R6 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and Rc comprises more than one multiple bond, and these multiple bonds are in a conjugated configuration; and R7, R8, R9 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl; and R10, R11, R12, R13 are independently alkoxyl, hydroxyl, halide, OC(O)R, OC(O)OR, wherein R is alkyl or a substituted alkyl.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 21, 2013
    Applicants: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Yuanqiao Rao, Robert L. Auger, John D. Weaver, Paul J. Popa, Roxanne M. Jenkins, Christopher P. Sullivan, Jessica P. Evans, Cecilia W. Kiarie, Yasmin N. Srivastava, Jeffrey L. Fenton, JR.
  • Publication number: 20110277840
    Abstract: The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
    Type: Application
    Filed: April 28, 2011
    Publication date: November 17, 2011
    Inventors: Todd R. Bryden, Jeffrey L. Fenton, JR., Gary E. Mitchell, Kirk R. Thompson, Michael E. Mills, David J. Parrillo