Abstract: A refuse vehicle includes a chassis supporting a plurality of wheels, a vehicle body supported by the chassis and defining a receptacle for storing refuse therein, a lifting system coupled to the vehicle body and movable relative to the receptacle, wherein the lifting system is configured to lift a refuse container and empty refuse in the refuse container into the receptacle, at least one sensor configured to detect a thermal event in or near the refuse container, wherein the lifting system is configured to stop lifting the refuse container in response to the thermal event being detected.

Abstract: A vehicle includes an automated apparatus extending from the vehicle and a projection system. The projection system includes a projector positioned on the vehicle. The projector is configured to operate to provide a projection onto a ground surface, the projection covering a zone. The automated apparatus is configured to operate within the zone.

Abstract: A refuse vehicle includes multiple systems, each system including a sensor. The refuse vehicle also includes an automated check system. The automated check system includes processing circuitry configured to obtain sensor data from the sensor of each of the multiple systems, determine which of the multiple systems require manual inspection based on the sensor data, and operate a display screen to prompt a technician to manually inspect one or more of the multiple systems.

Abstract: A refuse vehicle includes a chassis, a body, a lock, a tailgate, an ejector, an actuator, a second actuator, and a processor. The body defines a receptacle for storing refuse. The lock is coupled to the body and is configured to releasably secure a movable tailgate. The receptacle contains the ejector. The ejector can transition from a first position that is spaced from the tailgate to a second position proximate the tailgate. The actuator is configured to transition the ejector from the first position to the second position. The second actuator is configured to move the tailgate. The processor is configured to selectively unlock the tailgate and transition the ejector from the first position to the second position in response to receiving a single input to thereby eject refuse from the receptacle without receiving multiple inputs.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method and device for adjusting the unstored length of tubing directed to improving the use of infusion sets that deliver fluids to a user. The device includes a storage module and other features for adjusting, storing and securing the length of the tubing. The method of adjusting the length of the tubing to a desired length typically comprises removably attaching the tubing to the adjuster, adjusting the tubing by wrapping the tubing around a hub or post of the adjuster, and fixing the length of the unstored tubing by attaching the tubing to a securing device such as a friction structure or fastener.

Abstract: A method for forming an improved copper barrier layer begins by providing a silicon-containing layer (10). A physical vapor deposition process is then used to form a thin tantalum nitride amorphous layer (12). A thin amorphous titanium nitride layer (14) is then deposited over the amorphous tantalum nitride layer. A collective thickness of the tantalum nitride and titanium nitride layers 12 and 14 is roughly 400 angstroms or less. A copper material 16 is then deposited on top of the amorphous titanium nitride wherein the composite tantalum nitride layer 12 and titanium nitride layer 14 effectively prevents copper from diffusion from the layer 16 to the layer 10.

Abstract: Conductive plugs (28) are formed in a semiconductor device (10) using a chemical mechanical polishing (CMP) process. A blanket conductive layer (26), for example of tungsten, is deposited in a plug opening (24). The conductive layer is polished back by CMP using a slurry comprised of either copper sulfate (CuSO.sub.4) or copper perchlorate [Cu(ClO.sub.4).sub.2 ] and an abrasive, such as alumina or silica, and water. In another embodiment, a CMP process using such slurries may be used to form conductive interconnects (50) in a semiconductor device (40).

Abstract: A method for forming vias in a semiconductor device improves the resistance and reliability of contacts formed by use of an etch stop layer during the via formation process. An etch stop layer (40), preferably a silicon nitride or aluminum nitride layer, is deposited over conductive interconnect (34). A via (44) is etched in interlayer dielectric (42), stopping on etch stop layer (40). Etch stop layer (40) is then anisotropicly etched to expose the top of conductive interconnect (34), while maintaining a portion of the etch stop layer along a sidewall of the interconnect, and particularly along those sidewall portions which contain aluminum. A conductive plug (54) is then formed in the via, preferably using one or more barrier or glue layers (50). Formation of a tungsten plug using tungsten hexafluoride can then be performed without unwanted reactions between the tungsten source gas and the aluminum interconnect.

Abstract: In the present invention, an inlaid interconnect (44) is formed by chemical mechanical polishing. A polish assisting layer (31), in the form of an aluminum nitride layer, is formed between an interlayer dielectric (30) and an interconnect metal (42) to prevent dishing or cusping of the interconnect upon polishing. By allowing the sacrificial polish assisting layer (31) to be removed at close to the same rate as interconnect metal (42) during the final stages of polishing, dishing is avoided. The aluminum nitride layer also facilitates chemical vapor deposition of aluminum as the interconnect metal by providing a more suitable nucleation site for aluminum than exists with silicon dioxide.

Abstract: A conductive plug (46) is formed in a semiconductor device (30) by using an aluminum nitride glue layer (42). The glue layer is deposited on an interlayer dielectric (40) prior to forming a contact opening (44), such that the glue layer does not line the opening sidewalls or bottom. Tungsten or other plug material is then deposited in the opening and on the glue layer and subsequently polished or etched back to form the plug. The remaining portions of the glue layer may be left within the device or removed as deemed appropriate.

Abstract: A metal interconnect structure includes copper interface layers (24, 30) located between a refractory metal via plug (28), and first and second metal interconnect layers (16, 32). The copper interface layers (24, 30) are confined to the area of a via opening (22) in an insulating layer (20) overlying the first interconnect layer (16) and containing the via plug (28). The interface layers (24, 30) are subjected to an anneal to provide copper reservoirs (36, 37) in the interconnect layers (16, 32) adjacent to the interface layers (24, 30). The copper reservoirs (36, 37) continuously replenish copper depleted from the interface when an electric current is passed through the interconnect structure. A process includes the selective deposition of copper onto an exposed region (23) of the first metal interconnect layer (16), and onto the upper portion the via plug (28), followed by an anneal in forming gas to form the copper reservoirs (36, 37).

Abstract: A metal interconnect structure includes copper interface layers (24, 30) located between a refractory metal via plug (28), and first and second metal interconnect layers (16, 32). The copper interface layers (24, 30) are confined to the area of a via opening (22) in an insulating layer (20) overlying the first interconnect layer (16) and containing the via plug (28). The interface layers (24, 30) are subjected to an anneal to provide copper reservoirs (36, 37) in the interconnect layers (16, 32) adjacent to the interface layers (24, 30). The copper reservoirs (36, 37) continuously replenish copper depleted from the interface when an electric current is passed through the interconnect structure. A process includes the selective deposition of copper onto an exposed region (23) of the first metal interconnect layer (16), and onto the upper portion the via plug (28), followed by an anneal in forming gas to form the copper reservoirs (36, 37).