Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using multiple different semi-conductive channel regions generating structures formed by multiple different semi-conductive electrical current or voltage control structures. One embodiment includes providing a first and second metal oxide semiconductor field effect transistor (MOSFET) sections formed on opposite sides of a metal-semiconductor field effect transistor (MESFET) such that operation of the MESFET modulates or controls current otherwise controlled by an electrical path of the MOSFET sections. A control system for determining when an embodiment of the invention is to be operated is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as high voltage radio frequency transmitter or receiver systems. Methods of operation for a variety of modes are also provided.

Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using a combination of a metal-oxide semiconductor field effect transistor (MOSFET) and junction field effect transistor (JFET) disposed perpendicularly and within a certain orientation to each other. An embodiment of the invention can be formed and operable for modulating current and/or voltage response or mitigating electromagnetic or radiation interference effects on the MOSFET by controlling a semi-conductive channel region (SCR) using an additional gate, e.g., JFET, disposed perpendicularly with respect to the MOSFET configured to generate an electromagnetic field into the MOSFET's semi-SCR. A control system for controlling operation is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as radio frequency transmitter or receiver systems.

Abstract: Apparatuses and methods for modulating current/voltage response using multiple semi-conductive channel regions (SCR) produced from different integrated semiconductor structures are provided. In particular, embodiments include systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using combined integrated functions of a lateral double-diffused metal-oxide semiconductor field effect transistor (LDMOSFET) and metal-semiconductor field effect transistor (MESFET) disposed in proximity of a LDMOSFET's SCR within a certain orientation forming a second SCR.

Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using a combination of a metal-oxide semiconductor field effect transistor (MOSFET) and junction field effect transistor (JFET) disposed perpendicularly and within a certain orientation to each other. An embodiment of the invention can be formed and operable for modulating current and/or voltage response or mitigating electromagnetic or radiation interference effects on the MOSFET by controlling a semi-conductive channel region (SCR) using an additional gate, e.g., JFET, disposed perpendicularly with respect to the MOSFET configured to generate an electromagnetic field into the MOSFET's semi-SCR. A control system for controlling operation is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as radio frequency transmitter or receiver systems.

Abstract: Apparatuses and methods for modulating current/voltage response using multiple semi-conductive channel regions (SCR) produced from different integrated semiconductor structures are provided. In particular, embodiments include systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using combined integrated functions of a lateral double-diffused metal-oxide semiconductor field effect transistor (LDMOSFET) and junction field effect transistor (JFET) disposed in proximity of a LDMOSFET's SCR within a certain orientation forming a second SCR.

Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using multiple different semi-conductive channel regions generating structures formed by multiple different semi-conductive electrical current or voltage control structures. One embodiment includes providing a first and second metal oxide semiconductor field effect transistor (MOSFET) sections formed on opposite sides of a junction field effect transistor (JFET) such that operation of the JFET modulates or controls current otherwise controlled by an electrical path of the MOSFET sections. A control system for determining when an embodiment of the invention is to be operated is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as highvoltage radio frequency transmitter or receiver systems. Methods of operation for a variety of modes are also provided.

Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using multiple different semi-conductive channel regions generating structures formed by multiple different semi-conductive electrical current or voltage control structures. One embodiment includes providing a first and second metal oxide semiconductor field effect transistor (MOSFET) sections formed on opposite sides of a junction field effect transistor (JFET) such that operation of the JFET modulates or controls current otherwise controlled by an electrical path of the MOSFET sections. A control system for determining when an embodiment of the invention is to be operated is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as highvoltage radio frequency transmitter or receiver systems. Methods of operation for a variety of modes are also provided.

Abstract: Apparatuses and methods for modulating current/voltage response using multiple semi-conductive channel regions (SCR) produced from different integrated semiconductor structures are provided. In particular, embodiments include systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using combined integrated functions of a lateral double-diffused metal-oxide semiconductor field effect transistor (LDMOSFET) and junction field effect transistor (JFET) disposed in proximity of a LDMOSFET's SCR within a certain orientation forming a second SCR.

Abstract: An exemplary electrical adapter that can be used with a triaxial cable having a center connector, a middle connector, and an outer connector as well as a method for using the same is provided. The adapter's center connector electrically couples with the cable's center conductor, the middle connector electrically couples with the cable's middle conductor, and the outer connector electrically couples with the cable's outer conductor. The adapter further includes a first single-conductor connector electrically coupled with the center connector of the triaxial connector where the first single-conductor connector can be configured to provide the center conductor of the cable at a predetermined potential. The adapter embodiment further includes a second single-conductor electrically coupled with the middle connector of the triaxial connector where the second single-conductor connector is configured to provide the middle conductor of the cable at the same potential as the center conductor of the cable.