Patents by Inventor Jeffrey Loewecke
Jeffrey Loewecke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7807978Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: GrantFiled: May 5, 2008Date of Patent: October 5, 2010Assignee: Texas Instruments IncorporatedInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Publication number: 20080206971Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: ApplicationFiled: May 5, 2008Publication date: August 28, 2008Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Patent number: 7397046Abstract: Methods (300, 400) are described for calibrating the implantation angle of an ion implanter utilized in the manufacture of semiconductor products. One method (300) includes implanting (330) phosphorous ions into a pilot wafer held by a wafer platen held at a starting implantation angle in the ion implanter. The phosphorous implantation into a p-doped substrate of the pilot or blank wafer, for example, forms a semiconductive sheet. The method (300) then includes changing the implantation angle (340), and implanting another wafer (330) with phosphorous ions. The angle changing (340) and implanting (330) of other wafers continues in this manner until all wafers or angles are implanted (350) as desired. The phosphorous implanted wafers are then measured (360) with a four-point probe, for example, to obtain the sheet resistance of all the implanted wafers.Type: GrantFiled: December 29, 2004Date of Patent: July 8, 2008Assignee: Texas Instruments IncorporatedInventors: Duofeng Yue, Jeffrey Loewecke, JieJie Xu, Thomas Patrick Conroy
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Publication number: 20080142724Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: ApplicationFiled: February 29, 2008Publication date: June 19, 2008Applicant: Texas Instruments IncorporatedInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Patent number: 7385202Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: GrantFiled: December 7, 2004Date of Patent: June 10, 2008Assignee: Texas Instruments IncorporatedInventors: James D. Bernstein, Lance S. Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Patent number: 7232744Abstract: The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.Type: GrantFiled: October 1, 2004Date of Patent: June 19, 2007Assignee: Texas Instruments IncorporatedInventors: Said Ghneim, James D. Bernstein, Lance S. Robertson, Jiejie Xu, Jeffrey Loewecke
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Publication number: 20060154457Abstract: The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate (340) and implanting a dopant within the substrate (340) using an implant (370), the implant (370) moving at varying speeds across the substrate (340) to provide different concentrations of the dopant within the substrate (340).Type: ApplicationFiled: January 12, 2005Publication date: July 13, 2006Applicant: Texas Instruments, Inc.Inventors: Sean Collins, Jeffrey Loewecke, James Bernstein
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Publication number: 20060138355Abstract: Methods (300, 400) are described for calibrating the implantation angle of an ion implanter utilized in the manufacture of semiconductor products. One method (300) includes implanting (330) phosphorous ions into a pilot wafer held by a wafer platen held at a starting implantation angle in the ion implanter. The phosphorous implantation into a p-doped substrate of the pilot or blank wafer, for example, forms a semiconductive sheet. The method (300) then includes changing the implantation angle (340), and implanting another wafer (330) with phosphorous ions. The angle changing (340) and implanting (330) of other wafers continues in this manner until all wafers or angles are implanted (350) as desired. The phosphorous implanted wafers are then measured (360) with a four-point probe, for example, to obtain the sheet resistance of all the implanted wafers.Type: ApplicationFiled: December 29, 2004Publication date: June 29, 2006Inventors: Duofeng Yue, Jeffrey Loewecke, JieJie Xu, Thomas Conroy
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Publication number: 20060121706Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).Type: ApplicationFiled: December 7, 2004Publication date: June 8, 2006Applicant: Texas Instruments, Inc.Inventors: James Bernstein, Lance Robertson, Said Ghneim, Jiejie Xu, Jeffrey Loewecke
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Publication number: 20060073685Abstract: The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.Type: ApplicationFiled: October 1, 2004Publication date: April 6, 2006Applicant: Texas Instruments IncorporatedInventors: Said Ghneim, James Bernstein, Lance Robertson, Jiejie Xu, Jeffrey Loewecke
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Publication number: 20060035394Abstract: The present invention provides a method for manufacturing semiconductor devices, a method for manufacturing an integrated circuit, and a method for improving a drive current for semiconductor devices on a wafer-by-wafer basis. The method for manufacturing semiconductor devices, among other elements, includes patterning gate structures on a substrate (220), each of the gate structures having a profile associated therewith, and obtaining information representative of the profiles of the gate structures (240). In accordance with the present invention the information may then be fed forward to alter a manufacturing parameter associated with a drive current of the semiconductor devices (250).Type: ApplicationFiled: August 12, 2004Publication date: February 16, 2006Applicant: Texas Instruments, IncorporatedInventors: James Friedmann, Kaneez Banu, Yuqing Xu, Jeffrey Loewecke, James Vaughan