Patents by Inventor Jeffrey Lutze
Jeffrey Lutze has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8576624Abstract: Dynamically determining read levels on chip (e.g., memory die) is disclosed herein. One method comprises reading a group of non-volatile storage elements on a memory die at a first set of read levels. Results of the two most recent of the read levels are stored on the memory die. A count of how many of the non-volatile storage elements in the group showed a different result between the reads for the two most recent read levels is determined. The determining is performed on the memory die using the results stored on the memory die. A dynamic read level is determined for distinguishing between a first pair of adjacent data states of the plurality of data states based on the read level when the count reaches a pre-determined criterion. Note that the read level may be dynamically determined on the memory die.Type: GrantFiled: February 5, 2013Date of Patent: November 5, 2013Assignee: SanDisk Technologies, Inc.Inventors: Deepanshu Dutta, Dana Lee, Jeffrey Lutze
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Patent number: 8456915Abstract: A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations are performed to determine whether the non-volatile storage elements have reached their target. Non-volatile storage elements being programmed to a first set of one or more targets are verified to determine whether they have reached their target and are locked out of further programming if it is determined that they have reached their target. Non-volatile storage elements being programmed to the second set of one or more targets are tested to determine the number of fast programming bits. When the number of fast bits for a particular target is greater than a threshold, then programming stops for the non-volatile storage elements being programmed to the particular target.Type: GrantFiled: March 30, 2012Date of Patent: June 4, 2013Assignee: SanDisk Technologies Inc.Inventors: Changyuan Chen, Jeffrey Lutze, Yingda Dong, Hua-Ling Hsu
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Patent number: 8406053Abstract: Dynamically determining read levels on chip (e.g., memory die) is disclosed herein. One method comprises reading a group of non-volatile storage elements on a memory die at a first set of read levels. Results of the two most recent of the read levels are stored on the memory die. A count of how many of the non-volatile storage elements in the group showed a different result between the reads for the two most recent read levels is determined. The determining is performed on the memory die using the results stored on the memory die. A dynamic read level is determined for distinguishing between a first pair of adjacent data states of the plurality of data states based on the read level when the count reaches a pre-determined criterion. Note that the read level may be dynamically determined on the memory die.Type: GrantFiled: September 21, 2011Date of Patent: March 26, 2013Assignee: SanDisk Technologies Inc.Inventors: Deepanshu Dutta, Dana Lee, Jeffrey Lutze
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Publication number: 20130070524Abstract: Dynamically determining read levels on chip (e.g., memory die) is disclosed herein. One method comprises reading a group of non-volatile storage elements on a memory die at a first set of read levels. Results of the two most recent of the read levels are stored on the memory die. A count of how many of the non-volatile storage elements in the group showed a different result between the reads for the two most recent read levels is determined. The determining is performed on the memory die using the results stored on the memory die. A dynamic read level is determined for distinguishing between a first pair of adjacent data states of the plurality of data states based on the read level when the count reaches a pre-determined criterion. Note that the read level may be dynamically determined on the memory die.Type: ApplicationFiled: September 21, 2011Publication date: March 21, 2013Inventors: Deepanshu Dutta, Dana Lee, Jeffrey Lutze
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Publication number: 20120188824Abstract: A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations are performed to determine whether the non-volatile storage elements have reached their target. Non-volatile storage elements being programmed to a first set of one or more targets are verified to determine whether they have reached their target and are locked out of further programming if it is determined that they have reached their target. Non-volatile storage elements being programmed to the second set of one or more targets are tested to determine the number of fast programming bits. When the number of fast bits for a particular target is greater than a threshold, then programming stops for the non-volatile storage elements being programmed to the particular target.Type: ApplicationFiled: March 30, 2012Publication date: July 26, 2012Inventors: Changyuan Chen, Jeffrey Lutze, Yingda Dong, Hua-Ling Hsu
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Patent number: 8174895Abstract: A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations are performed to determine whether the non-volatile storage elements have reached their target. Non-volatile storage elements being programmed to a first set of one or more targets are verified to determine whether they have reached their target and are locked out of further programming if it is determined that they have reached their target. Non-volatile storage elements being programmed to the second set of one or more targets are tested to determine the number of fast programming bits. When the number of fast bits for a particular target is greater than a threshold, then programming stops for the non-volatile storage elements being programmed to the particular target.Type: GrantFiled: December 15, 2009Date of Patent: May 8, 2012Assignee: SanDisk Technologies Inc.Inventors: Changyuan Chen, Jeffrey Lutze, Yingda Dong, Hua-Ling Hsu
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Patent number: 8111554Abstract: A system is disclosed for programming non-volatile storage that improves performance by setting the starting programming voltage to a first level for fresh parts and adjusting the starting programming voltage as the memory is cycled. For example, the system programs a set of non-volatile storage elements during a first period using an increasing program signal with a first initial value and subsequently programs the set of non-volatile storage elements during a second period using an increasing program signal with a second initial value, where the second period is subsequent to the first period and the second initial value is different than the first initial value.Type: GrantFiled: October 1, 2009Date of Patent: February 7, 2012Assignee: SanDisk Technologies Inc.Inventor: Jeffrey Lutze
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Publication number: 20110170358Abstract: A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations are performed to determine whether the non-volatile storage elements have reached their target. Non-volatile storage elements being programmed to a first set of one or more targets are verified to determine whether they have reached their target and are locked out of further programming if it is determined that they have reached their target. Non-volatile storage elements being programmed to the second set of one or more targets are tested to determine the number of fast programming bits. When the number of fast bits for a particular target is greater than a threshold, then programming stops for the non-volatile storage elements being programmed to the particular target.Type: ApplicationFiled: December 15, 2009Publication date: July 14, 2011Inventors: Changyuan Chen, Jeffrey Lutze, Yingda Dong, Hua-Ling Hsu
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Patent number: 7961511Abstract: A hybrid method of programming a non-volatile memory cell to a final programmed state is described. The method described is a more robust protocol suitable for reliably programming selected memory cells while eliminating programming disturbs. The hybrid method comprises programming the non-volatile memory cell to a first state according to a first coarse programming mechanism, and programming the non-volatile memory cell according to a second different more precise programming mechanism thereby completing the programming of the non-volatile memory cell to the final programmed state. Additionally, the described method is particularly advantageous for programming multilevel chips.Type: GrantFiled: September 26, 2006Date of Patent: June 14, 2011Assignee: SanDisk CorporationInventors: Dana Lee, Yingda Dong, Changyuan Chen, Jeffrey Lutze
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Patent number: 7944749Abstract: A low voltage method of programming a selected non-volatile memory cell in a memory array having a gate node coupled to a wordline WL(n) and a drain node connected to a selected bitline by injecting hot carriers from a drain region of an injecting memory cell having a gate node coupled to a next neighbor wordline WL(n?1) into a floating gate of the selected non-volatile memory cell on the wordline WL(n).Type: GrantFiled: December 21, 2006Date of Patent: May 17, 2011Assignee: SanDisk CorporationInventors: Dana Lee, Jeffrey Lutze
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Publication number: 20100020613Abstract: A system is disclosed for programming non-volatile storage that improves performance by setting the starting programming voltage to a first level for fresh parts and adjusting the starting programming voltage as the memory is cycled. For example, the system programs a set of non-volatile storage elements during a first period using an increasing program signal with a first initial value and subsequently programs the set of non-volatile storage elements during a second period using an increasing program signal with a second initial value, where the second period is subsequent to the first period and the second initial value is different than the first initial value.Type: ApplicationFiled: October 1, 2009Publication date: January 28, 2010Inventor: Jeffrey Lutze
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Patent number: 7633812Abstract: A system is disclosed for programming non-volatile storage that improves performance by setting the starting programming voltage to a first level for fresh parts and adjusting the starting programming voltage as the memory is cycled. For example, the system programs a set of non-volatile storage elements during a first period using an increasing program signal with a first initial value and subsequently programs the set of non-volatile storage elements during a second period using an increasing program signal with a second initial value, where the second period is subsequent to the first period and the second initial value is different than the first initial value.Type: GrantFiled: January 23, 2008Date of Patent: December 15, 2009Assignee: SanDisk CorporationInventor: Jeffrey Lutze
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Patent number: 7630254Abstract: A system is disclosed for programming non-volatile storage that improves performance by setting the starting programming voltage to a first level for fresh parts and adjusting the starting programming voltage as the memory is cycled. For example, the system programs a set of non-volatile storage elements during a first period using an increasing program signal with a first initial value and subsequently programs the set of non-volatile storage elements during a second period using an increasing program signal with a second initial value, where the second period is subsequent to the first period and the second initial value is different than the first initial value.Type: GrantFiled: January 23, 2008Date of Patent: December 8, 2009Assignee: SanDisk CorporationInventor: Jeffrey Lutze
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Patent number: 7623389Abstract: System for programming a selected non-volatile memory cell in a memory array having a gate node coupled to a wordline WL(n) and a drain node connected to a selected bitline by injecting hot carriers from a drain region of an injecting memory cell having a gate node coupled to a next neighbor wordline WL(n?1) into a floating gate of the selected non-volatile memory cell on the wordline WL(n).Type: GrantFiled: December 21, 2006Date of Patent: November 24, 2009Assignee: SanDisk CorporationInventors: Dana Lee, Jeffrey Lutze
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Patent number: 7495956Abstract: A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.Type: GrantFiled: January 29, 2008Date of Patent: February 24, 2009Assignee: SanDisk CorporationInventors: Yupin Fong, Jun Wan, Jeffrey Lutze
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Patent number: 7457178Abstract: A flash memory device of the multi-level cell (MLC) type, in which control gate voltages in read and programming operations and a bandgap reference voltage source are trimmable from external terminals, is disclosed. In a special test mode, control gate voltages can be applied to a selected programmed memory cell so that the threshold voltage of the cell can be sensed. A digital-to-analog converter (DAC) use for programming and a second read/verify DAC apply varying analog voltages and are sequentially used to verify the programming of an associated set of memory cells in this special test mode, with the DAC input values that provide the closest result selected for use in normal operation. These DAC's are dependent on the value of a reference source that my also be trimmed.Type: GrantFiled: January 12, 2006Date of Patent: November 25, 2008Assignee: SanDisk CorporationInventors: Loc Tu, Jeffrey Lutze, Jun Wan, Jian Chen
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Patent number: 7447086Abstract: A non-volatile memory system is programmed so as to reduce or avoid program disturb. In accordance with one embodiment, multiple program inhibit schemes are employed for a single non-volatile memory system. Program inhibit schemes are selected based on the word line being programmed. Certain program inhibit schemes have been discovered to better minimize or eliminate program disturb at select word lines. In one embodiment, selecting a program inhibit scheme includes selecting a program voltage pulse ramp rate. Different ramp rates have been discovered to better minimize program disturb when applied to select word lines. In another embodiment, the temperature of a memory system is detected before or during a program operation. A program inhibit scheme can be selected based on the temperature of the system.Type: GrantFiled: October 2, 2007Date of Patent: November 4, 2008Assignee: SanDisk CorporationInventors: Jun Wan, Jeffrey Lutze, Masaaki Higashitani, Gerrit Jan Hemink, Ken Oowada, Jian Chen, Geoffrey S Gongwer
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Patent number: 7447065Abstract: A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.Type: GrantFiled: January 29, 2008Date of Patent: November 4, 2008Assignee: SanDisk CorporationInventors: Yupin Fong, Jun Wan, Jeffrey Lutze
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Patent number: 7440318Abstract: A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.Type: GrantFiled: January 29, 2008Date of Patent: October 21, 2008Assignee: SanDisk CorporationInventors: Yupin Fong, Jun Wan, Jeffrey Lutze
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Patent number: RE46056Abstract: A set of non-volatile storage elements are subjected to a programming process in order to store data. During the programming process, one or more verification operations are performed to determine whether the non-volatile storage elements have reached their target. Non-volatile storage elements being programmed to a first set of one or more targets are verified to determine whether they have reached their target and are locked out of further programming if it is determined that they have reached their target. Non-volatile storage elements being programmed to the second set of one or more targets are tested to determine the number of fast programming bits. When the number of fast bits for a particular target is greater than a threshold, then programming stops for the non-volatile storage elements being programmed to the particular target.Type: GrantFiled: March 31, 2014Date of Patent: July 5, 2016Assignee: SanDisk Technologies LLCInventors: Changyuan Chen, Jeffrey Lutze, Yingda Dong, Hua-Ling Hsu