Abstract: A computing system includes one or more memory devices to store instructions; and one or more processors to execute the instructions to perform operations. The operations include: receiving a plurality of images captured by a camera; selecting a portion of the plurality of images having a quality rating above a threshold level; processing, by a coarse classifier, a first image among the portion of the plurality of images to determine whether the first image depicts at least one object from one or more particular classes of objects; in response to determining the first image depicts the at least one object from the one or more particular classes of objects, performing an object recognition process to recognize the at least one object; and presenting content related to the at least one object recognized via the object recognition process.

Abstract: Methods, systems, and apparatus for efficient image analysis. In some aspects, a system includes a camera configured to capture images, one or more environment sensors configured to detect movement of the camera, a data processing apparatus, and a memory storage apparatus in data communication with the data processing apparatus. The data processing apparatus can access, for each of a multitude of images captured by a mobile device camera, data indicative of movement of the camera at a time at which the camera captured the image. The data processing apparatus can also select, from the images, a particular image for analysis based on the data indicative of the movement of the camera for each image, analyze the particular image to recognize one or more objects depicted in the particular image, and present content related to the one or more recognized objects.

Abstract: A method for fabricating contacts in a semiconductor substrate includes forming a thin buffer oxide layer (26) over a substrate (10) with active devices defined therein. Access openings (28), (30) and (32) are then formed in the thin oxide layer (26) and then aluminum columnar contacts (38), (40) and (42) formed therein with a predetermined height. A thick oxide layer of phosphorous silicate glass (50) is then formed over the built-up structure. A planarizing resist layer (52) is formed over top of the structure with a substantially thinner area defined proximate the upper surfaces of the columnar contacts (38, 40, 42). The thin areas (54, 56, 58) are removed by selectively etching away the upper surface of the resist layer (52) by an excited plasma process. The structure is then subjected to a phosphorous selective etch to remove only those portions of the thick oxide layer (52') proximate the upper surfaces of the columnar contacts (38, 40, 42).

Abstract: The disclosure relates to the formation of reachup contacts for VLSI integrated circuit interconnects wherein studs are formed of a conducting material which reaches up through subsequently applied insulating films or the like to contact metal patterns. The reachup contacts are fabricated using LPCVD polycrystalline silicon as a refill in etched apertures in an insulating layer with a titanium or other appropriate material over the silicon layer with subsequent reaction of the silicon layer and the titanium layer to form temperature resistant studs of titanium silicide.