Abstract: An apparatus and method is provided for removing deposits which accumulate within a continuous APCVD system having more than one reaction chamber. The apparatus includes means for delivering vaporized etchant material at a controlled flow rate to each reaction chamber along the system. The mechanism for channeling or metering etchant to each injector can be achieved by properly shaped receptacles or chambers having one or more inlets and multiple outlets. The apparatus can remove deposits of deposition materials which periodically fill or plug perforations within the chamber floor, the perforation openings being necessary to allow floor purge to the wafer backside surface. The apparatus can also remove deposition material formed upon or between purge curtains surrounding each chamber. The present apparatus can also selectively meter more etchant to one or more reaction chambers in order to remove unusually heavy amounts of deposits formed therein.