Abstract: A method, apparatus, system, article of manufacture, and computer readable medium provide the ability to create a point cloud indexed file. A grid (of cells that are divided into subcells) is mapped over points in a point cloud dataset. An occupancy value, that indicates whether a subcell contains a point, is computed for each subcell. A surface area contribution factor is computed for each cell and identifies a count of subcells that are occupied divided by a total number of subcells. The surface area contribution factor for each cell and points for each cell are written to the point cloud indexed file.

Abstract: A method, apparatus, system, article of manufacture, and computer readable medium provide the ability to create a point cloud indexed file. A grid (of cells that are divided into subcells) is mapped over points in a point cloud dataset. An occupancy value, that indicates whether a subcell contains a point, is computed for each subcell. A surface area contribution factor is computed for each cell and identifies a count of subcells that are occupied divided by a total number of subcells. The surface area contribution factor for each cell and points for each cell are written to the point cloud indexed file.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: An apparatus for heat treatment of a wafer. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is. configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A vertical rapid heating furnace for treating semiconductor wafers comprising a hot wall reaction tube positioned within a cylindrical array of circular parallel heating elements substantially concentric therewith, each heating element being spaced from the hot wall reaction tube, each heating element comprising a coil of resistance heating conductor. The coiled resistance heating conductor can be a coil of resistance heating wire, the coil having an outer diameter of from 1 to 7 mm and supported in an annular heating element support. Each heating element support is dimensioned to support and accommodate the thermally expanded heating element supported therein at both the minimum and maximum furnace temperatures. Preferably, each annular heating element support is provided by an annular recess in the insulation surrounding the array of heating elements.

Abstract: The present invention discloses an apparatus, method, and article of manufacture for generating graphic images. In accordance with the present invention, an application program receives commands from a computer user via an input device and provides an output command stream to a plurality of renderer programs. The renderer programs selectively modify the output command stream and transmit the output command stream to a graphics peripheral device or to one or more of the other renderer programs.

Abstract: A thermal treatment boat having a plurality of annular, coaxial, spaced apart bands having substantially the same inner diameters. The bands are separated by a band spacing distance of from about 3.8 to 12.7 mm, each of the bands having a height, Height.sub.Band, in mm according to the equation: ##EQU1## wherein Height.sub.Band is always.gtoreq.wafer thickness; ColumnHeight is the total height of the treatment boat, mm; BandSpacing is the band spacing distance between adjacent bands, mm; and NumberBands is the total number of bands in the treatment boat. Preferably the NumberBands is from about 12 to about 100. Each band includes wafer support means for supporting a wafer therein at a position which is substantially centered between the upper edge surface and said lower edge surface thereof, the wafer support means in one embodiment including at least three inwardly extending projections.

Abstract: Process for treating multiple parallel wafers positioned in a heating zone surrounded by a heater emitting radiant heat. A space of from 0.5 to 2.55 cm is maintained between each wafer, and the outer portions of each wafer are shielded from radiant heat emitted by the heater by means of a circular heat shield positioned between the outer edge of the wafer and the heater. The circular heat shield has an upper edge and a bottom edge, and is positioned at a distance of less than 0.5 cm from the outer edge of the wafer. The wafer is positioned to be substantially centered between said upper edge and said bottom edge of its respective heat shield, and the circular heat shield has a height of from 0.35 to 0.95. The heat provided by the heater can be sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of 100.degree. C./min without causing thermal stress damage to the wafers.

Abstract: A furnace (100) is provided which aids in the reduction of polysilicon and quartz contaminants during polysilicon deposition on monocrystalline wafers. The wafers are heated for polysilicon deposition within the interior of a quartz tube (102) which is mounted so that the interior sidewalls are vertical and the tube opening is at the top of the furnace. A quartz boat (104) is adapted for carrying the wafers in a spaced apart relationship with a quartz rod (144) maintaining the wafers within the boat when it is suspended vertically from an elevator bar (128). The elevator bar moves the quartz boat vertically into the interior of the quartz tube (102) for heating without contact between the quartz boat and sidewalls of the quartz tube. The level of contamination is therefore less and the yield of certain integrated circuits much improved.