Abstract: An anti-reflective layer is formed on the sidewalls of metal interconnects in an integrated circuit containing photodetector devices. After fabricating the photodetector devices, the metal interconnects are formed. An anti-reflective layer is formed over the interconnects and is directionally etched so that a portion of the anti-reflective layer remains covering the interconnect sidewalls, thereby reducing optical cross-talk in the photodetector devices due to sidewall reflection.

Abstract: An integrated waveguide array structure allows electrical testing of each unit for shorts between waveguide elements of the array, and shorts between waveguides and the substrate prior to assembly into a larger optico-electronic unit. Multiple waveguide array structures are formed on a wafer, each waveguide array being provided with a cross bar connected to an electrical contact at each end, such that alternate waveguide elements of the array are electrically connected. When connected to a suitable testing device, the existence of shorts between adjacent elements can be immediately detected. Following testing, the cross bar and electrical contact are removed by scribing.

Abstract: An integrated waveguide array structure allows electrical testing of each unit for shorts between waveguide elements of the array, and shorts between waveguides and the substrate prior to assembly into a larger optico-electronic unit. Multiple waveguide array structures are formed on a wafer, each waveguide array being provided with a cross bar connected to an electrical contact at each end, such that alternate waveguide elements of the array are electrically connected. When connected to a suitable testing device, the existence of shorts between adjacent elements can be immediately detected. Following testing, the cross bar and electrical contact are removed by scribing.

Abstract: An anti-reflective layer is formed on the sidewalls of metal interconnects in an integrated circuit containing photodetector devices. After fabricating the photodetector devices, the metal interconnects are formed. An anti-reflective layer is formed over the interconnects and is directionally etched so that a portion of the anti-reflective layer remains covering the interconnect sidewalls, thereby reducing optical cross-talk in the photodetector devices due to sidewall reflection.

Abstract: An anti-reflective layer is formed on the sidewalls of metal interconnects in an integrated circuit containing photodetector devices. After fabricating the photodetector devices, the metal interconnects are formed. An anti-reflective layer is formed over the interconnects and is directionally etched so that a portion of the anti-reflective layer remains covering the interconnect sidewalls, thereby reducing optical cross-talk in the photodetector devices due to sidewall reflection.

Abstract: Light transmitting filter elements are formed in holes etched in a covering passivation layer overlying light sensing devices formed in an integrated circuit. Filter material is spun on to the wafer to fill the etched holes. The filter material is cured and etched back below the passivation layer top surface. Subsequent filter materials transmitting different light frequencies may be similarly spun on to fill subsequently etched holes, cured, and etched back to form additional filter elements. A contiguous structure of individual filter elements may be formed.