Abstract: Touch screens with ultra-thin stack-ups can provide for a lower profile device, can improve the optical image on the display by reducing the display to cover glass distance, and can reduce the weight of the device. In some examples, the thickness of the touch screen stack-up can be reduced and/or the border region reduced, by removing the flex circuit connection from the stack-up. A flexible substrate can be used to enable routing of touch electrodes to touch circuitry. In some examples including a shield layer, the thickness of the touch screen stack-up can be reduced by routing the shield layer to a shield electrode on the touch sensor panel. The shield layer can then be routed to touch sensing circuitry via the flexible substrate. In some examples, the touch sensor panel or a portion of thereof can be integrated with the polarizer.

Abstract: Touch screens with ultra-thin stack-ups can provide for a lower profile device, can improve the optical image on the display by reducing the display to cover glass distance, and can reduce the weight of the device. In some examples, the thickness of the touch screen stack-up can be reduced and/or the border region reduced, by removing the flex circuit connection from the stack-up. A flexible substrate can be used to enable routing of touch electrodes to touch circuitry. In some examples including a shield layer, the thickness of the touch screen stack-up can be reduced by routing the shield layer to a shield electrode on the touch sensor panel. The shield layer can then be routed to touch sensing circuitry via the flexible substrate. In some examples, the touch sensor panel or a portion of thereof can be integrated with the polarizer.

Abstract: Touch screens with ultra-thin stack-ups can provide for a lower profile device, can improve the optical image on the display by reducing the display to cover glass distance, and can reduce the weight of the device. In some examples, the thickness of the touch screen stack-up can be reduced and/or the border region reduced, by removing the flex circuit connection from the stack-up. A flexible substrate can be used to enable routing of touch electrodes to touch circuitry. In some examples including a shield layer, the thickness of the touch screen stack-up can be reduced by routing the shield layer to a shield electrode on the touch sensor panel. The shield layer can then be routed to touch sensing circuitry via the flexible substrate. In some examples, the touch sensor panel or a portion of thereof can be integrated with the polarizer.

Abstract: Touch screens with ultra-thin stack-ups can provide for a lower profile device, can improve the optical image on the display by reducing the display to cover glass distance, and can reduce the weight of the device. In some examples, the thickness of the touch screen stack-up can be reduced and/or the border region reduced, by removing the flex circuit connection from the stack-up. A flexible substrate can be used to enable routing of touch electrodes to touch circuitry. In some examples including a shield layer, the thickness of the touch screen stack-up can be reduced by routing the shield layer to a shield electrode on the touch sensor panel. The shield layer can then be routed to touch sensing circuitry via the flexible substrate. In some examples, the touch sensor panel or a portion of thereof can be integrated with the polarizer.

Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.

Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.