Abstract: Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening to seal the ILD layer and the metal layer. Subsequent processing may include formation of a via by etching through the portion of the liner and the remaining portion of the cap layer, and depositing a metal.

Abstract: A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10%-50% wt % Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si.sub.3 N.sub.4.