Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: A sleeve for retention of a surgical port is disclosed. The sleeve comprises a first sleeve portion, a second sleeve portion, a plurality of flanges, and a reversible locking mechanism. The second sleeve portion is disposed around the first sleeve portion and is reversibly slidable distally from a first position to a second position along the first sleeve portion. The plurality of flanges is disposed in a radial sequence around the first sleeve portion. The flanges are radially collapsed along the first sleeve portion when the second sleeve portion is in the first position and are radially expanded when the second sleeve portion is in the second position. The first sleeve portion is configured for placement of a surgical port therethrough and to be fixedly secured to the surgical port therealong. Additional sleeves are also disclosed.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: A sleeve for retention of a surgical port is disclosed. The sleeve comprises a first sleeve portion, a second sleeve portion, a plurality of flanges, and a reversible locking mechanism. The second sleeve portion is disposed around the first sleeve portion and is reversibly slidable distally from a first position to a second position along the first sleeve portion. The plurality of flanges is disposed in a radial sequence around the first sleeve portion. The flanges are radially collapsed along the first sleeve portion when the second sleeve portion is in the first position and are radially expanded when the second sleeve portion is in the second position. The first sleeve portion is configured for placement of a surgical port therethrough and to be fixedly secured to the surgical port therealong. Additional sleeves are also disclosed.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: A multifunctional accessory channel device is disclosed. The device comprises a tube, a proximal adapter for attachment of the tube to a control section of an endoscope, and a distal adapter for attachment of the tube at or near a distal tip of an endoscope. The tube has a slit that is reversibly locally openable along the length and the depth of the slit by translation of a portion of an accessory through and along the slit but is otherwise fully closed. The tube has a distal end shaped as a notch. The device allows for removal of large specimens from the body of a patient by use of an endoscope without need for removing the endoscope from its position within the body. The device also serves as a secondary channel, allowing for use of other endoscopic instruments or for accessory suction.

Abstract: An endoscopic tissue resection device configured to be attached at a distal tip of an endoscope is disclosed. The device comprises a cap, a snare sheath, a snare, and a spring wire. The snare comprises a collapsible snare wire configured to be retracted from the cavity of the cap into the snare sheath, the collapsible snare wire reversibly collapsing upon retraction, and to be advanced from the snare sheath into the cavity of the cap, the collapsible snare wire reversibly expanding upon advancement. The spring wire is reversibly deflectable from a resting state to a deflected state. In the resting state the spring wire orients and stabilizes an apex of the collapsible snare wire within the cap such that two opposing wire portions of the collapsible snare wire are positioned in apposition to a distal opening of the cap.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Abstract: A sleeve for retention of a surgical port is disclosed. The sleeve comprises a first sleeve portion, a second sleeve portion, a plurality of flanges, and a reversible locking mechanism. The second sleeve portion is disposed around the first sleeve portion and is reversibly slidable distally from a first position to a second position along the first sleeve portion. The plurality of flanges is disposed in a radial sequence around the first sleeve portion. The flanges are radially collapsed along the first sleeve portion when the second sleeve portion is in the first position and are radially expanded when the second sleeve portion is in the second position. The first sleeve portion is configured for placement of a surgical port therethrough and to be fixedly secured to the surgical port therealong. Additional sleeves are also disclosed.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: A multifunctional accessory channel device is disclosed. The device comprises a tube, a proximal adapter for attachment of the tube to a control section of an endoscope, and a distal adapter for attachment of the tube at or near a distal tip of an endoscope. The tube has a slit that is reversibly locally openable along the length and the depth of the slit by translation of a portion of an accessory through and along the slit but is otherwise fully closed. The tube has a distal end shaped as a notch. The device allows for removal of large specimens from the body of a patient by use of an endoscope without need for removing the endoscope from its position within the body. The device also serves as a secondary channel, allowing for use of other endoscopic instruments or for accessory suction.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

Abstract: A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below ?20° C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.