Abstract: Doped silicon carbide structures, as well as methods associated with the same, are provided. The structures, for example, are components (e.g., layer, patterned structure) in MEMS structures. The doped silicon carbide structures may be highly conductive, thus, providing low resistance to electrical current. An in-situ doping process may be used to form the structures. The process parameters can be selected so that the structures have a low residual stress and/or low strain gradient. Thus, the structures may be formed having desired dimensions with little (or no) distortion arising from residual stress and/or strain gradient. The high conductivity and mechanical integrity of the structures are significant advantages in MEMS devices such as sensors and actuators.

Abstract: MEMS structures that include silicon carbide micromechanical components, as well as methods of forming and using the same, are provided. The silicon carbide micromechanical components may be integrated on the same structure with electronic components that control or detect movement of the micromechanical components. MEMS structures of the invention may be used in a variety of applications including microsensor and microactuator applications.