Abstract: A planarizing element is described for use in a thermal imaging process. The planarizing element includes a support; a planarizing layer comprising a crosslinkable binder having a weight average molecular weight of about 20,000 to about 110,000.

Abstract: Anisotropic conductive coatings and electronic devices made using the coatings are provided. The anisotropic conductive coatings are particularly useful in electronic devices that contain flexible substrates.

Abstract: Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

Abstract: A method is described for producing thin semiconductor films on a substrate by contacting a substrate with a solution containing a metal salt, a source of a Group VIa element, and chelating agent, and a noble metal in its elemental form. The resulting semiconductor films are useful for electronic and photovoltaic applications.

Abstract: A planarizing element is described for use in a thermal imaging process. The planarizing element includes a support; a planarizing layer comprising a crosslinkable binder having a weight average molecular weight of about 20,000 to about 110,000.

Abstract: The present invention is a process for transfer of a pattern of material from a donor substrate to a receiver substrate by lamination. The pattern of the transferred material is defined by an aperture in a mask interposed between the donor and receiver during lamination. The technique is compatible with flexible polymer receiver substrates and is useful in fabricating thin film transistors for flexible displays.

Abstract: This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.

Abstract: This invention provides a method for increasing the charge-carrier mobility in vapor-deposited pentacene, resulting in improved semiconductor properties.

Abstract: Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.