Abstract: A radiation detector head assembly includes a detector column. The detector column includes a detector having a first surface and a second surface opposite the first surface. The detector column also includes a first collimator disposed over the first surface of the detector configured for use during imaging scans involving radiation in a first energy range. The detector column further includes a second collimator disposed over the second surface of the detector configured for use during imaging scans involving radiation in a second energy range different from the first energy range.

Abstract: A radiation detector processing assembly is provided including at least one application specific integrated circuit (ASIC). The radiation detector processing assembly includes plural input channels, a common readout, and a readout channel. Each input channel is configured to receive an input corresponding to a detection event from a pixel of a pixelated detector. The common readout is operably coupled to the plural input channels, and is configured to receive a corresponding output signal from each input channel. Each corresponding output signal has a unique address identifying the corresponding input channel. The readout channel is configured to receive a corresponding readout output from the common readout. The readout output includes output signals from a corresponding group of input channels.

Abstract: A radiation detector assembly is provided including a semiconductor detector, pixelated anodes, and at least one processor. The pixelated anodes are disposed on a surface of the semiconductor detector, and configured to generate a primary signal responsive to reception of a photon and a secondary signal responsive to an induced charge caused by reception of a photon by at least one adjacent anode. The at least one processor is operably coupled to the pixelated anodes, and configured to define sub-pixels for each pixelated anode; acquire primary signals and secondary signals from the pixelated anodes; determine sub-pixel locations for acquisition events using the primary and secondary signals; generate a sub-pixel energy spectrum for each sub-pixel; apply at least one energy calibration parameter to adjust the sub-pixel energy spectra for each pixelated anode; and, for each pixelated anode, combine the adjusted sub-pixel energy spectra to provide a pixelated anode spectrum.

Abstract: A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. The plural pixelated anodes are disposed on a surface of the detector. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to a charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to a charge collected by an adjacent anode to the pixelated anode. The at least one processor is configured to determine a collected value for the collected charge signal in the pixelated anode; determine a non-collected value for the non-collected charge signal in the pixelated anode corresponding to the charge collected by the adjacent anode; use the non-collected value for the non-collected charge signal to determine a sub-pixel location for the adjacent anode; and use the collected value to count a single event in the pixelated anode.

Abstract: A radiation detector processing assembly is provided including at least one application specific integrated circuit (ASIC). The radiation detector processing assembly includes plural input channels, a common readout, and a readout channel. Each input channel is configured to receive an input corresponding to a detection event from a pixel of a pixelated detector. The common readout is operably coupled to the plural input channels, and is configured to receive a corresponding output signal from each input channel. Each corresponding output signal has a unique address identifying the corresponding input channel. The readout channel is configured to receive a corresponding readout output from the common readout. The readout output includes output signals from a corresponding group of input channels.

Abstract: A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. The plural pixelated anodes are disposed on a surface of the detector. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to a charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to a charge collected by an adjacent anode to the pixelated anode. The at least one processor is configured to determine a collected value for the collected charge signal in the pixelated anode; determine a non-collected value for the non-collected charge signal in the pixelated anode corresponding to the charge collected by the adjacent anode; use the non-collected value for the non-collected charge signal to determine a sub-pixel location for the adjacent anode; and use the collected value to count a single event in the pixelated anode.

Abstract: A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to charge collected by an adjacent anode. The at least one processor includes a tangible and non-transitory memory having stored thereon instructions configured to direct the at least one processor to determine a collected value for the collected charge signal, to determine a non-collected value for the non-collected charge signal, determine a calibrated value for the non-collected charge signal, determine a total charge produced by a charge sharing event using the collected value and the calibrated value, and count the charge sharing event as a single event if the total charge exceeds a predetermined value.

Abstract: A radiation detector assembly is provided including a semiconductor detector, pixelated anodes, and at least one processor. The pixelated anodes are disposed on a surface of the semiconductor detector, and configured to generate a primary signal responsive to reception of a photon and a secondary signal responsive to an induced charge caused by reception of a photon by at least one adjacent anode. The at least one processor is operably coupled to the pixelated anodes, and configured to define sub-pixels for each pixelated anode; acquire primary signals and secondary signals from the pixelated anodes; determine sub-pixel locations for acquisition events using the primary and secondary signals; generate a sub-pixel energy spectrum for each sub-pixel; apply at least one energy calibration parameter to adjust the sub-pixel energy spectra for each pixelated anode; and, for each pixelated anode, combine the adjusted sub-pixel energy spectra to provide a pixelated anode spectrum.