Abstract: There are disclosed certain 1-[2-(aminomethyl)benzyl]-2-thioxo-1,2,3,5-tetrahydro-4H-pyrrolo[3,2-d]pyrimidin-4-one compounds of formula (I), and pharmaceutically acceptable salts thereof, together with compositions containing them and their use in therapy. The compounds are inhibitors of the enzyme MPO and are thereby particularly useful in the treatment or prophylaxis of cardiovascular disorders such as heart failure and coronary artery disease related conditions.

Abstract: The present invention provides methods for treating or preventing asthma and associated conditions in a patient. The methods of the present invention comprise administering to a subject in need thereof a therapeutic composition comprising an interleukin-4 receptor (IL-4R) antagonist, such as an anti-IL-4R antibody.

Abstract: Control logic in a memory device executes a programming operation to program the set of memory blocks of the set of memory planes to a set of a programming levels. In response to determining at least a portion of a first memory block passed a program verify operation associated with a last programming level of the set of programming levels, the control logic executes a first program sub-operation to terminate the programming operation with respect to a first subset of one or more memory planes of the set of memory planes that passed the program verify operation associated with the last programming level and identify a second subset of one or more memory planes that failed the program verify operation associated with the last programming level. The control logic executes a second program sub-operation to apply a trim set to the second subset of one or more memory planes that failed the program verify operation of the last programming level.

Abstract: A memory device comprising a memory array and control logic operatively coupled with the memory array. The control logic is to: detect a program operation directed at a selected wordline of multiple wordlines of the memory array; determine, during an initial phase of the program operation, whether a program voltage being applied to the selected wordline satisfies a threshold program voltage; add, in response to the program voltage not satisfying the threshold program voltage, a base offset voltage to an initial pass voltage to generate a higher pass voltage, the initial pass voltage being a percentage of an initial program voltage; and cause the higher pass voltage to be applied to a remainder of the multiple wordlines other than the selected wordline.

Abstract: Control logic in a memory device initiates a first loop of a program operation, the first loop comprising (a) a program phase where a plurality of memory cells associated with a selected wordline in a block of the memory array are programmed to respective ones of a plurality of programming levels and (b) a corresponding program verify phase. The control logic further identifies memory cells of the plurality of memory cells associated with a first sub-set of the plurality of programming levels to be verified during the program verify phase, the first sub-set comprising two or more dynamically selected programming levels comprising at least a lowest programming level and a second lowest programing level of the respective ones of the plurality of programming levels.

Abstract: The present invention provides methods for treating atopic dermatitis (AD). Also provided are methods for improving one or more AD-associated parameter(s), and methods for decreasing the level of at least one AD-associated biomarker in a subject in need thereof. The methods of the present invention comprise administering to a subject in need thereof a pharmaceutical composition comprising an interleukin-4 receptor (IL-4R) antagonist such as an anti-IL-4R antibody.

Abstract: A device includes a memory array and a sense circuit coupled with the memory array. The sense circuit includes a sense node coupled with a data line of the memory array. A first sensing path includes a first transistor having a first gate coupled with the sense node. A second sensing path includes a second transistor having a second gate coupled with the sense node. A first threshold voltage of the first transistors differs from a second threshold voltage of the second transistor by a threshold voltage gap.

Abstract: A device includes a memory array and a sense circuit coupled with the memory array. The sense circuit includes a sense node coupled with a data line of the memory array. A first sensing path includes a first transistor having a first gate coupled with the sense node. A second sensing path includes a second transistor having a second gate coupled with the sense node. A first threshold voltage of the first transistors differs from a second threshold voltage of the second transistor by a threshold voltage gap.

Abstract: This disclosure provides anti-CXCR5 antibodies and their use in the amelioration, treatment, or prevention of lupus. The disclosure also provides prophylactic, immunotherapeutic, and diagnostic compositions comprising an anti-CXCR5 antibody, and the use of such anti-CXCR5 antibodies in methods of preventing or treating lupus in mammals, including humans.

Abstract: This disclosure provides anti-CXCR5 antibodies and their use in the amelioration, treatment, or prevention of lupus. The disclosure also provides prophylactic, immunotherapeutic, and diagnostic compositions comprising an anti-CXCR5 antibody, and the use of such anti-CXCR5 antibodies in methods of preventing or treating lupus in mammals, including humans.

Abstract: This disclosure provides anti-CXCR5 antibodies and their use in the amelioration, treatment, or prevention of lupus. The disclosure also provides prophylactic, immunotherapeutic, and diagnostic compositions comprising an anti-CXCR5 antibody, and the use of such anti-CXCR5 antibodies in methods of preventing or treating lupus in mammals, including humans.

Abstract: The present invention provides methods for treating or preventing asthma and associated conditions in a patient. The methods of the present invention comprise administering to a subject in need thereof a therapeutic composition comprising an interleukin-4 receptor (IL-4R) antagonist, such as an anti-IL-4R antibody.

Abstract: The present invention provides methods for treating atopic dermatitis (AD). Also provided are methods for improving one or more AD-associated parameter(s), and methods for decreasing the level of at least one AD-associated biomarker in a subject in need thereof. The methods of the present invention comprise administering to a subject in need thereof a pharmaceutical composition comprising an interleukin-4 receptor (IL-4R) antagonist such as an anti-IL-4R antibody.

Abstract: The present invention provides methods for treating or preventing asthma and associated conditions in a patient. The methods of the present invention comprise administering to a subject in need thereof a therapeutic composition comprising an interleukin-4 receptor (IL-4R) antagonist, such as an anti-IL-4R antibody.

Abstract: An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

Abstract: The present invention provides methods for treating atopic dermatitis (AD). Also provided are methods for improving one or more AD-associated parameter(s), and methods for decreasing the level of at least one AD-associated biomarker in a subject in need thereof. The methods of the present invention comprise administering to a subject in need thereof a pharmaceutical composition comprising an interleukin-4 receptor (IL-4R) antagonist such as an anti-IL-4R antibody.

Abstract: The present invention provides methods for treating or preventing asthma and associated conditions in a patient. The methods of the present invention comprise administering to a subject in need thereof a therapeutic composition comprising an interleukin-4 receptor (IL-4R) antagonist, such as an anti-IL-4R antibody.

Abstract: An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

Abstract: An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

Abstract: Some embodiments include a device having storage node and a latch circuit coupled to the storage node to latch data provided to the storage node during one of a first mode and a second mode of the device. The latch circuit includes a first transistor, a second transistor, and a third transistor coupled between a first voltage node and a second voltage node. The third transistor is configured to selectively turn on and off in the first and second modes. Other embodiments are described.