Patents by Inventor Jeffrey N. Miller
Jeffrey N. Miller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7473941Abstract: A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.Type: GrantFiled: August 15, 2005Date of Patent: January 6, 2009Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Virginia M. Robbins, Steven D. Lester, Jeffrey N. Miller, David P. Bour
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Publication number: 20080174233Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.Type: ApplicationFiled: April 13, 2007Publication date: July 24, 2008Inventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
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Patent number: 7340124Abstract: The present invention provides an optical switch including a loss element having a signal loss, and a rare earth doped gain element optically connected in series with the loss element. The rare earth doped gain element is operable to produce a signal gain. The signal gain and the signal loss are about equal. The present invention also provides a method of optical switching including optically connecting a loss element in series with a rare earth doped gain element and passing an optical signal through the loss element and the gain element. The loss element attenuates the optical signal by a first amount. The method further includes selectively applying an optical pump to the gain element to perform the switching, the gain element amplifying the optical signal by the first amount in response to the optical pump.Type: GrantFiled: April 7, 2004Date of Patent: March 4, 2008Assignee: Avago Technologies Fiber IP Pte LtdInventors: Falgun D. Patel, Jeffrey N. Miller
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Patent number: 7264527Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.Type: GrantFiled: June 25, 2004Date of Patent: September 4, 2007Assignee: Lumileds Lighting U.S., LLCInventors: Moungi E. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
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Patent number: 7209283Abstract: A flattened gain amplifier has a waveguide with a core doped with at least one species of rare earth ion. The rare earth ion has a gain profile with a first gain in a first wavelength band and a second gain in a second wavelength band. The flattened gain amplifier also has a first grating and a reflective element optically coupled to the core. The positions of the first grating and reflective element along the length define a first amplifying length and a second amplifying length. The ratio of the first amplifying length to the second amplifying length is about equal to the ratio of the second gain to the first gain.Type: GrantFiled: April 7, 2004Date of Patent: April 24, 2007Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd.Inventors: Falgun D. Patel, Jeffrey N. Miller
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Patent number: 7180656Abstract: The optical amplifier has a waveguide including a core and a cladding. The cladding at least partially surrounds the core and is doped with at least one species of rare earth ion in the range of 5 to 75 wt %. In another embodiment, the core is doped with Er3+ in the range of 7 to 9 wt % and with Yb3+ in the range of 11 to 13 wt %.Type: GrantFiled: April 7, 2004Date of Patent: February 20, 2007Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd.Inventors: Falgun D. Patel, Jeffrey N. Miller
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Patent number: 6953702Abstract: Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.Type: GrantFiled: May 16, 2002Date of Patent: October 11, 2005Assignee: Agilent Technologies, Inc.Inventors: Jeffrey N. Miller, Virginia M. Robbins, Steven D. Lester
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Patent number: 6914265Abstract: An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the dots themselves, or of a mixture of light emitted from the dots and light emitted from the primary source. The dots desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.Type: GrantFiled: December 26, 2002Date of Patent: July 5, 2005Assignees: Massachusetts Institute of Technology, Lumileds Lighting U.S., LLCInventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
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Patent number: 6890777Abstract: An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the dots themselves, or of a mixture of light emitted from the dots and light emitted from the primary source. The dots desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.Type: GrantFiled: December 26, 2002Date of Patent: May 10, 2005Assignees: Massachusetts Institute of Technology, Hewlett-Packard CompanyInventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
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Publication number: 20040259363Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.Type: ApplicationFiled: June 25, 2004Publication date: December 23, 2004Inventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
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Patent number: 6833958Abstract: The present disclosure relates to an optical cavity, comprising a first non-concave reflector positioned at a first end of the optical cavity and a second non-concave reflector positioned at a second end of the optical cavity that receives and reflects light reflected from the first non-concave reflector. The first non-concave reflector is configured to focus light that reflects off of the reflector back upon itself to avoid diffraction losses from the optical cavity. In one embodiment of the invention, the first non-concave reflector includes a layer of material that has a thickness that vanes as a function of radial distance out from an axial center of the layer. In another embodiment of the invention, the first non-concave reflector includes a layer of material that has an index of refraction that varies as a function of radial distance out from an axial center of the layer.Type: GrantFiled: February 6, 2001Date of Patent: December 21, 2004Assignee: Agilent Technologies, Inc.Inventors: Glenn H. Rankin, Jeffrey N. Miller
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Patent number: 6806110Abstract: A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.Type: GrantFiled: May 16, 2002Date of Patent: October 19, 2004Assignee: Agilent Technologies, Inc.Inventors: Steven D. Lester, Virginia M. Robbins, Jeffrey N. Miller
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Patent number: 6804059Abstract: A tunable optical filter utilizes multiple electroholographic (EH) gratings with different center wavelengths to filter an optical signal over a wide wavelength range. The EH gratings are connected such that an input optical signal passes through at least one of the EH gratings. The EH gratings are activated and tuned by electrode pairs that are controlled through a voltage controller. The tunable optical filter is coarse tuned by activating the EH gratings having a wavelength range that includes the center wavelength that is to be filtered and fine tuned by adjusting the voltage that is applied across the activated EH gratings.Type: GrantFiled: December 27, 2001Date of Patent: October 12, 2004Assignee: Agilent Technologies, Inc.Inventors: Ali R. Motamedi, Douglas M. Baney, Jeffrey N. Miller, Marshall T. Depue
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Patent number: 6803719Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.Type: GrantFiled: July 9, 1999Date of Patent: October 12, 2004Assignee: Massachusetts Institute of TechnologyInventors: Jeffrey N. Miller, Ronald L. Moon, Moungi E. Bawendi, Jason Heine, Klavs F. Jensen
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Patent number: 6771680Abstract: An electrically-pumped vertical-cavity surface-emitting laser (VCSEL) has multiple active regions. Embodiments of the invention provide an electrically-pumped VCSEL having a number of different p-i-n junction and electrode arrangements, which, in various embodiments, allow independent biasing of the multiple active regions, and, in other embodiments, allow simplified electrical connections.Type: GrantFiled: October 22, 2002Date of Patent: August 3, 2004Assignee: Agilent Technologies, INCInventors: David P. Bour, Jeffrey N. Miller, Steve Lester, Virginia Robbins
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Publication number: 20040076209Abstract: An electrically-pumped vertical-cavity surface-emitting laser (VCSEL) has multiple active regions. Embodiments of the invention provide an electrically-pumped VCSEL having a number of different p-i-n junction and electrode arrangements, which, in various embodiments, allow independent biasing of the multiple active regions, and, in other embodiments, allow simplified electrical connections.Type: ApplicationFiled: October 22, 2002Publication date: April 22, 2004Inventors: David P. Bour, Jeffrey N. Miller, Steve Lester, Virginia Robbins
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Publication number: 20030215969Abstract: Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.Type: ApplicationFiled: May 16, 2002Publication date: November 20, 2003Inventors: Jeffrey N. Miller, Virginia M. Robbins, Steven D. Lester
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Publication number: 20030214992Abstract: A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.Type: ApplicationFiled: May 16, 2002Publication date: November 20, 2003Inventors: Steven D. Lester, Virginia M. Robbins, Jeffrey N. Miller
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Publication number: 20030127659Abstract: An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the dots themselves, or of a mixture of light emitted from the dots and light emitted from the primary source. The dots desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.Type: ApplicationFiled: December 26, 2002Publication date: July 10, 2003Inventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
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Publication number: 20030127660Abstract: An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum dots is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the dots themselves, or of a mixture of light emitted from the dots and light emitted from the primary source. The dots desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.Type: ApplicationFiled: December 26, 2002Publication date: July 10, 2003Inventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon