Abstract: This invention pertains to a method for producing thermally stable multi-layer coatings and the coatings produced therefrom. The multi-layer coating is comprised of a first coating produced from hydrogen silsesquioxane having a thickness of 1.25 to 2.25 &mgr;m and a second coating comprising silicon dioxide having a thickness of at least 100 nm. The method for producing the first coating comprises applying a fillerless hydrogen silsesquioxane resin composition onto a substrate and thereafter heating the hydrogen silsesquioxane resin at a temperature of 150° C. to 500° C. for a sufficient period of time to produce a crack-free coating having a thickness of 1.25 &mgr;m to 2.25 &mgr;m. The second coating is produced by depositing, preferably by PECVD, silicon dioxide over the first coating at a thickness of at least 100 nm.

Abstract: This invention pertains to a method for producing crack-free, insoluble, greater than 1.25 .mu.m thick coatings from hydrogen silsesquioxane resin compositions. The method for producing the coating comprises applying a fillerless hydrogen silsesquioxane resin composition onto a substrate and thereafter heating the hydrogen silsesquioxane resin at a temperature of less than 500.degree. C. for a controlled period of time to produce the crack-free coating having a thickness of greater than 1.25 .mu.m. The resins may be cured in an inert or oxygen containing environment.

Abstract: This invention pertains to a method of producing low dielectric coatings from hydrogen silsesquioxane resin. The method for producing the coatings comprises applying a film of hydrogen silsesquioxane resin onto a substrate and thereafter curing the film by first heating at a temperature of about 325.degree. C. to 350.degree. C. thereafter heating at a temperature of about 400.degree. C. to 450.degree. C. until the normalized SiH bond density is 50 to 80%. This two step curing process produces films having lower dielectric constant and improved mechanical properties.

Abstract: This invention pertains to a method for producing crack-free, insoluble, greater than 1.25 .mu.m thick coatings from hydrogen silsesquioxane resin compositions. The method for producing the coating comprises applying a fillerless hydrogen silsesquioxane resin composition onto a substrate and thereafter heating the hydrogen silsesquioxane resin at a temperature of less than 500.degree. C. for a controlled period of time to produce the crack-free coating having a thickness of greater than 1.25 .mu.m. The resins may be cured in an inert or oxygen containing environment.

Abstract: This invention pertains to a method for producing an insoluble coating on a substrate by curing a composition comprising hydrogen silsesquioxane at a temperature of 375.degree. C. or less for a time sufficient to produce a coating having >80% SiH. It has been found that when the hydrogen silsesquioxane resin is cured at a temperature of 375.degree. C. or less that that the insoluble SiH containing coating shows improved film stress.