Patents by Inventor Jeffrey P. Fournier

Jeffrey P. Fournier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitrogenated carbon electrode for chalcogenide device and method of making same
    Patent number: 7943922
    Abstract: A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
    Type: Grant
    Filed: January 6, 2009
    Date of Patent: May 17, 2011
    Assignee: Ovonyx, Inc.
    Inventor: Jeffrey P. Fournier
  • Electrically rewritable non-volatile memory element and method of manufacturing the same
    Patent number: 7692272
    Abstract: A non-volatile memory element comprises a bottom electrode 12; a top electrode 15; and a recording layer 13 containing phase change material and a block layer 14 that can block phase change of the recording layer 13, provided between the bottom electrode 12 and the top electrode 15. The block layer 14 is constituted of material having an electrical resistance that is higher than that of material constituting the recording layer 13. The block layer 14 suppresses the radiation of heat towards the top electrode 15 and greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrode 15 itself can be used to constitute a bit line, or a separate bit line can be provided.
    Type: Grant
    Filed: January 19, 2006
    Date of Patent: April 6, 2010
    Assignee: Elpida Memory, Inc.
    Inventors: Isamu Asano, Natsuki Sato, Wolodymyr Czubatyj, Jeffrey P. Fournier
  • Nitrogenated Carbon Electrode for Chalcogenide Device and Method of Making Same
    Publication number: 20090146130
    Abstract: A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
    Type: Application
    Filed: January 6, 2009
    Publication date: June 11, 2009
    Inventor: Jeffrey P. Fournier
  • Nitrogenated carbon electrode for chalcogenide device and method of making same
    Patent number: 7473950
    Abstract: A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: January 6, 2009
    Assignee: Ovonyx, Inc.
    Inventor: Jeffrey P. Fournier
  • Nitrogenated carbon electrode for chalcogenide device and method of making same
    Publication number: 20070284635
    Abstract: A nitrogenated carbon electrode suitable for use in a chalcogenide device and method of making the same are described. The electrode comprises nitrogenated carbon and is in electrical communication with a chalcogenide material. The nitrogenated carbon material may be produced by combining nitrogen and vaporized carbon in a physical vapor deposition process.
    Type: Application
    Filed: June 7, 2006
    Publication date: December 13, 2007
    Inventor: Jeffrey P. Fournier
  • Programmable resistance memory element with titanium rich adhesion layer
    Patent number: 7129531
    Abstract: A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition.
    Type: Grant
    Filed: May 21, 2003
    Date of Patent: October 31, 2006
    Assignee: Ovonyx, Inc.
    Inventors: Jeffrey P. Fournier, Sergey A. Kostylev
  • Programmable resistance memory element with titanium rich adhesion layer
    Publication number: 20040026731
    Abstract: A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition.
    Type: Application
    Filed: May 21, 2003
    Publication date: February 12, 2004
    Inventors: Jeffrey P. Fournier, Sergey A. Kostylev