Abstract: One embodiment provides a method for determining mask layouts. During operation, the system can receive a design intent. Next, the system can determine a set of critical edges in the design layout, and select a first edge and a second edge. The system can then determine a first trench and a second trench using the first edge and the second edge, respectively. Note that an edge of the first trench may substantially overlap with the first edge, and an edge of the second trench may substantially overlap with the second edge. Next, the system may assign the first trench and the second trench to the first mask layout and the second mask layout, respectively. The system can then increase the first trench and the second trench, thereby improving pattern fidelity. The resulting mask layouts may be used in a double patterning process.

Abstract: One embodiment provides a method for determining mask layouts. During operation, the system can receive a design intent. Next, the system can determine a set of critical edges in the design layout, and select a first edge and a second edge. The system can then determine a first trench and a second trench using the first edge and the second edge, respectively. Note that an edge of the first trench may substantially overlap with the first edge, and an edge of the second trench may substantially overlap with the second edge. Next, the system may assign the first trench and the second trench to the first mask layout and the second mask layout, respectively. The system can then increase the first trench and the second trench, thereby improving pattern fidelity. The resulting mask layouts may be used in a double patterning process.

Abstract: For phase-shifting micro lithography, a method of assigning phase to a set of shifter polygons in a mask layer separated by a set of target features includes assigning a first phase to a first shifter polygon, identifying a set of target features that touch the first shifter polygon, and assigning a second phase to all shifter polygons in the set that touch the set of target features in contact with the first shifter polygon. The set of shifter polygons and the set of target features are separated into aggregates that are spatially isolated from each other such that the phase assignment in one aggregate does not affect the phase assignments in other aggregates.

Abstract: For phase-shifting microlithography, a method of assigning phase to a set of shifter polygons in a mask layer separated by a set of target features includes assigning a first phase to a first shifter polygon, identifying a set of target features that touch the first shifter polygon, and assigning a second phase to all shifter polygons in the set that touch the set of target features in contact with the first shifter polygon. The set of shifter polygons and the set of target features are separated into aggregates that are spatially isolated from each other such that the phase assignment in one aggregate does not affect the phase assignments in other aggregates.

Abstract: For phase-shifting microlithography, a method of assigning phase to a set of shifter polygons in a mask layer separated by a set of target features includes assigning a first phase to a first shifter polygon, identifying a set of target features that touch the first shifter polygon, and assigning a second phase to all shifter polygons in the set that touch the set of target features in contact with the first shifter polygon. The set of shifter polygons and the set of target features are separated into aggregates that are spatially isolated from each other such that the phase assignment in one aggregate does not affect the phase assignments in other aggregates.

Abstract: For phase-shifting microlithography, a method of assigning phase to a set of shifter polygons in a mask layer separated by a set of target features includes assigning a first phase to a first shifter polygon, identifying a set of target features that touch the first shifter polygon, and assigning a second phase to all shifter polygons in the set that touch the set of target features in contact with the first shifter polygon. The set of shifter polygons and the set of target features are separated into aggregates that are spatially isolated from each other such that the phase assignment in one aggregate does not affect the phase assignments in other aggregates.

Abstract: A method of structuring vectorized data obtained by scanning a drawing or other document comprising the steps of displaying on a computer controlled display screen a template image comprising template lines and nodes corresponding to the acquired image data and selecting portions of the acquired image data to be designated for inclusion in a restructured image data set by using a screen cursor to select the corresponding template lines displayed on the screen. Inclusion designations are subsequently and selectively removed as desired from portions of the acquired image data from the structured data set by using the cursor to select the corresponding lines and nodes on the screen. When the desired portions of the acquired data set are selectively designated for inclusion in the restructured data set, all remaining designated data is copied into the restructured image data.