Abstract: Method and apparatus for managing data in a storage device, such as a solid-state drive (SSD). A non-volatile memory (NVM) is arranged into multiple garbage collection units (GCUs) each separately erasable and allocatable as a unit. Read circuitry applies read voltages to memory cells in the GCUs to sense a programmed state of the memory cells. Calibration circuitry groups different memory cells from different GCUs into calibration groups that share a selected set of read voltages. A read command queue accumulates pending read commands to transfer data from the NVM to a local read buffer. Read command coalescing circuitry coalesces selected read commands from the queue into a combined command for execution as a single batch command. The combined batch command may include read voltages for use in retrieval of the requested data.

Abstract: Method and apparatus for managing data in a storage device, such as a solid-state drive (SSD). A non-volatile memory (NVM) is arranged into multiple garbage collection units (GCUs) each separately erasable and allocatable as a unit. Read circuitry applies read voltages to memory cells in the GCUs to sense a programmed state of the memory cells. Calibration circuitry groups different memory cells from different GCUs into calibration groups that share a selected set of read voltages. A read command queue accumulates pending read commands to transfer data from the NVM to a local read buffer. Read command coalescing circuitry coalesces selected read commands from the queue into a combined command for execution as a single batch command. The combined batch command may include read voltages for use in retrieval of the requested data.