Abstract: A product use and behavior instrument includes a housing defining a central compartment therein. The housing includes a first housing end, a second housing end, and a housing wall. The first housing end defines a combustible smoking article holder configured to receive a combustible smoking article. The second housing end includes a hollow flow member extending from the second housing end in a direction axially away from the first housing end. The controller is positioned within the central compartment of the housing. The controller includes a sensor circuit structured to collect at least one use data characteristic of a smoking action. The smoking action is associated with the use of the combustible smoking article. Local memory is structured to buffer the at least one use data characteristic of the smoking action. A communication interface is structured to communicate to a remote computing device.

Abstract: A universal canister flush valve having a valve body configured to be fixed relative to a toilet tank and having a hollow wall defining an internal flow passage; a guide post coupled to and extending away from the valve body; a float fitted about and configured to slide relative to the guide post between a closed position and an open position, the float having an open top; and an extender that selectively couples to the open top in a first position, in which a first end of the extender is received in and coupled to the open top, and in a second position, in which a second end of the extender is received in and coupled to the open top, wherein the extender and float define a first overflow height in the first position and define a second overflow height in the second position.

Abstract: A vertical gallium nitride (GaN) PN diode uses epitaxial growth of a thick drift region with a very low carrier concentration and a carefully designed multi-zone junction termination extension to achieve high voltage blocking and high-power efficiency. An exemplary large area (1 mm2) diode had a forward pulsed current of 3.5 A, an 8.3 m?-cm2 specific on-resistance, and a 5.3 kV reverse breakdown. A smaller area diode (0.063 mm2) was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 m?-cm2, when accounting for current spreading through the drift region at a 45° angle.

Abstract: A method for automated manufacturing of e-vapor devices may include establishing a procession of partially assembled, oriented cartridge units of the e-vapor devices in an assembly path. The method may additionally include preparing the cartridge units for filling while the cartridge units are moving on a first drum-to-drum transport path of the assembly path. The method may also include adding liquid to the cartridge units while the cartridge units are moving in a filling workstation of the assembly path. The method may also include preparing the cartridge units for sealing while the cartridge units are moving on a second drum-to-drum transport path of the assembly path. The method further includes sealing the cartridge units while the cartridge units are moving in a sealing workstation of the assembly path.

Abstract: The present invention is directed to methods for resisting or promoting template independent nucleotide addition to the 3' terminus of a DNA duplex. The process comprises amplifying a target nucleic acid using primers which comprise a 5' terminal sequence which resists or promotes non-templated nucleotide addition to the 3' terminus of the complementary nucleic acid strand. The invention is also directed to a kit for cloning 3' nucleotidylated duplex DNA.