Abstract: This invention adds to the art of replacement source-drain cMOS transistors. Processes may involve etching a recess in the substrate material using one equipment set, then performing deposition in another. Disclosed is a method to perform the etch and subsequent deposition in the same reactor without atmospheric exposure. In-situ etching of the source-drain recess for replacement source-drain applications provides several advantages over state of the art ex-situ etching. Transistor drive current is improved by: (1) Eliminating contamination of the silicon-epilayer interface when the as-etched surface is exposed to atmosphere and (2) Precise control over the shape of the etch recess. Deposition may be done by a variety of techniques including selective and non-selective methods. In the case of blanket deposition, a measure to avoid amorphous deposition in performance critical regions is also presented.

Abstract: This invention adds to the art of replacement source-drain cMOS transistors. Processes may involve etching a recess in the substrate material using one equipment set, then performing deposition in another. Disclosed is a method to perform the etch and subsequent deposition in the same reactor without atmospheric exposure. In-situ etching of the source-drain recess for replacement source-drain applications provides several advantages over state of the art ex-situ etching. Transistor drive current is improved by: (1) Eliminating contamination of the silicon-epilayer interface when the as-etched surface is exposed to atmosphere and (2) Precise control over the shape of the etch recess. Deposition may be done by a variety of techniques including selective and non-selective methods. In the case of blanket deposition, a measure to avoid amorphous deposition in performance critical regions is also presented.

Abstract: This invention adds to the art of replacement source-drain cMOS transistors. Processes may involve etching a recess in the substrate material using one equipment set, then performing deposition in another. Disclosed is a method to perform the etch and subsequent deposition in the same reactor without atmospheric exposure. In-situ etching of the source-drain recess for replacement source-drain applications provides several advantages over state of the art ex-situ etching. Transistor drive current is improved by: (1) Eliminating contamination of the silicon-epilayer interface when the as-etched surface is exposed to atmosphere and (2) Precise control over the shape of the etch recess. Deposition may be done by a variety of techniques including selective and non-selective methods. In the case of blanket deposition, a measure to avoid amorphous deposition in performance critical regions is also presented.

Abstract: This invention adds to the art of replacement source-drain cMOS transistors. Processes may involve etching a recess in the substrate material using one equipment set, then performing deposition in another. Disclosed is a method to perform the etch and subsequent deposition in the same reactor without atmospheric exposure. In-situ etching of the source-drain recess for replacement source-drain applications provides several advantages over state of the art ex-situ etching. Transistor drive current is improved by: (1) Eliminating contamination of the silicon-epilayer interface when the as-etched surface is exposed to atmosphere and (2) Precise control over the shape of the etch recess. Deposition may be done by a variety of techniques including selective and non-selective methods. In the case of blanket deposition, a measure to avoid amorphous deposition in performance critical regions is also presented.

Abstract: Particles have an ultrathin, conformal coating are made using atomic layer deposition methods. The base particles include ceramic and metallic materials. The coatings can also be ceramic or metal materials that can be deposited in a binary reaction sequence. The coated particles are useful as fillers for electronic packaging applications, for making ceramic or cermet parts, as supported catalysts, as well as other applications.

Abstract: Particles have an ultrathin, conformal coating are made using atomic layer deposition methods. The base particles include ceramic and metallic materials. The coatings can also be ceramic or metal materials that can be deposited in a binary reaction sequence. The coated particles are useful as fillers for electronic packaging applications, for making ceramic or cermet parts, as supported catalysts, as well as other applications.

Abstract: Particles have an ultrathin, conformal coating are made using atomic layer deposition methods. The base particles include ceramic and metallic materials. The coatings can also be ceramic or metal materials that can be deposited in a binary reaction sequence. The coated particles are useful as fillers for electronic packaging applications, for making ceramic or cermet parts, as supported catalysts, as well as other applications.

Abstract: Particles have an ultrathin, conformal coating are made using atomic layer deposition methods. The base particles include ceramic and metallic materials. The coatings can also be ceramic or metal materials that can be deposited in a binary reaction sequence. The coated particles are useful as fillers for electronic packaging applications, for making ceramic or cermet parts, as supported catalysts, as well as other applications.