Abstract: A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.

Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Abstract: An optical disk based gas-sensing and storage system for sensing toxic gas species or environmental contaminants and recording such events on an optical data storage disk. The system includes a gas-retaining unit having an internal cavity for retaining a gaseous sample potentially comprising a gas species of interest, an optical storage disk arranged for contact with the gaseous sample in the gas-retaining unit, wherein the optical data storage disk includes a gas-sensing medium that exhibits a physical and/or chemical property change when exposed to the gas species of interest thereby generating optically readable signals, and a laser energy source positioned to irradiate the optical data storage disk to detect and/or enhance changes in chemical and/or physical properties of the gas-sensing medium and record optically readable signals.

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: The present invention relates to an electrode assembly useful for analyzing metal electroplating solutions. Such electrode assembly comprises a measuring electrode, preferably a rotating disc electrode or a microelectrode, and at least one of an in situ cleaning mechanism, a nucleation and metal growth optimization mechanism, and a voltage limiting mechanism. The present invention also relates to usage of such electrode assembly for in situ cleaning of the measuring electrode, nucleation and metal growth optimization, or voltage limitation.

Abstract: Metalorganic precursors of the formula: (R1R2N)a-bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1?b?(a-1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1-C4 alkyl, C3-C6 cycloalkyl, and RO3Si, where each R0 can be the same or different and each R0 is independently selected from H and C1-C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).

Abstract: A windowed chamber, e.g., a semiconductor manufacturing process chamber such as a scrubber, deposition chamber, thermal reactor, or the like, including a port with a radiation-transmissive window therein. Interiorly disposed within the chamber is (i) a disposable film on an interior surface of the window and/or (ii) a colorimetric medium disposed in viewable relationship to the window, so that a colorimetric change is perceivable through the window, e.g., visually or by optical sensing device, when the colorimetric medium is exposed to target gas species. Also disclosed is a gas detection article including a polymeric material that is colorimetrically responsive to the presence of at least one target gas species, in exposure thereto.

Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula ?wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: There is disclosed a structure of and a method for fabricating a ferroelectric film on a non-conductive substrate. An adhesion layer, e.g., a layer of silicon dioxide and a layer of zirconium oxide, is deposited over a substrate. A conductive layer, e.g., a noble metal, a non-noble metal, or a conductive oxide, is deposited over the adhesion layer. A seed layer, e.g., a compound containing lead, lanthanum, titanium, and oxygen, with a controlled crystal lattice orientation, is deposited on the conductive layer. This seed layer has ferroelectric properties. Over the seed layer, another ferroelectric material, e.g., lead zirconium titanate, can be deposited with a tetragonal or rhombohedral crystalline lattice structure with predetermined and controlled crystal orientation.

Abstract: A system for the deposition of a multicomponent material layer on a substrate from respective liquid precursors for components of the multicomponent material layer, comprising: a vapor deposition zone; and multiple vaporizer units, each of which is joined (i) to at least one source of liquid precursor for supplying at least one liquid precursor thereto, and (ii) in vapor flow communication with the vapor deposition zone arranged to retain the substrate therein, for deposition on the substrate of vapor phase species from precursor vapor formed by vaporization of liquid precursors in the vaporizer units of the system.

Abstract: There is disclosed a structure of and a method for fabricating a ferroelectric film on a non-conductive substrate. An adhesion layer, e.g., a layer of silicon dioxide and a layer of zirconium oxide, is deposited over a substrate. A conductive layer, e.g., a noble metal, a non-noble metal, or a conductive oxide, is deposited over the adhesion layer. A seed layer, e.g., a compound containing lead, lanthanum, titanium, and oxygen, with a controlled crystal lattice orientation, is deposited on the conductive layer. This seed layer has ferroelectric properties. Over the seed layer, another ferroelectric material, e.g., lead zirconium titanate, can be deposited with a tetragonal or rhombohedral crystalline lattice structure with predetermined and controlled crystal orientation.