Abstract: A memory cell includes a first electrode which extends horizontally over a substrate, a layer stack containing a phase change memory material layer and a threshold switch material layer which wrap around the first electrode, and a second electrode which contains a first vertical portion and a second vertical portion which extend vertically over the substrate and are located on first and second lateral sides of the layer stack.

Abstract: A memory cell includes a first electrode which extends horizontally over a substrate, a layer stack containing a phase change memory material layer and a threshold switch material layer which wrap around the first electrode, and a second electrode which contains a first vertical portion and a second vertical portion which extend vertically over the substrate and are located on first and second lateral sides of the layer stack.

Abstract: A four terminal magnetoresistive memory cell comprises a magnetic tunnel junction stack, a ferroelectric layer and a non-ferromagnetic spin polarization layer between the magnetic tunnel junction stack and the ferroelectric layer. The magnetic tunnel junction includes a first layer with fixed direction of magnetization, a free layer capable of changing direction of magnetization and an insulation layer between the first layer and the free layer. The non-ferromagnetic spin polarization layer is configured to generate perpendicular spin polarization in response to electrical current through the non-ferromagnetic spin polarization layer and a voltage received at the ferroelectric layer. The perpendicular spin polarization applies a torque on the free layer to change direction of magnetization of the free layer.

Abstract: A phase change memory device containing a phase change memory material layer includes a vertically repeating sequence of unit layer stacks located over a substrate, a plurality of openings vertically extending through the vertically repeating sequence, a plurality of vertical bit lines located within a respective one of the plurality of openings, and vertical stacks of insulating spacers. Each of the unit layer stacks includes an insulating layer, at least one of the phase change memory material layer or a threshold switch material layer, and an electrically conductive word line layer. Each of the insulating spacers laterally surrounds a respective one of the plurality of vertical bit lines, and contacts a sidewall of a respective one of the electrically conductive word line layers.

Abstract: A four terminal magnetoresistive memory cell comprises a magnetic tunnel junction stack, a ferroelectric layer and a non-ferromagnetic spin polarization layer between the magnetic tunnel junction stack and the ferroelectric layer. The magnetic tunnel junction includes a first layer with fixed direction of magnetization, a free layer capable of changing direction of magnetization and an insulation layer between the first layer and the free layer. The non-ferromagnetic spin polarization layer is configured to generate perpendicular spin polarization in response to electrical current through the non-ferromagnetic spin polarization layer and a voltage received at the ferroelectric layer. The perpendicular spin polarization applies a torque on the free layer to change direction of magnetization of the free layer.

Abstract: A system, method and apparatus for manufacturing high density magnetic media is disclosed. A flexible mold having a very low modulus of less than about 4 GPa is made on a rigid support. The mold nano-imprints a resist material on disks for hard disk drives. The flexible mold may comprise a perfluoropolyether with urethane acrylate end groups with a low surface adhesion from which the cured resist is easily released.

Abstract: A patterned magnetic media having offset servo and data regions. The media can be constructed by a method that allows both a data region and a servo region to be patterned without the patterning of one region adversely affecting the patterning of the other region. The method results in a patterned data region a patterned servo region and intermediate regions between the servo and data regions. The intermediate regions, which are most likely, but not necessarily, asymmetrical with one another indicate that the method has been used to pattern the media.

Abstract: An integrated circuit has a doped silicon semiconductor with regions of insulators and bare silicon. The bare silicon regions are isolated from other bare silicon regions. A semiconductor device on the doped silicon semiconductor has at least two electrical connections to form regions of patterned metal. A metal is electroplated directly on each of the regions of patterned metal to form plated connections without a seed layer. A self-aligned silicide is located under each plated connection, formed by annealing, for the regions of plated metal on bare silicon.

Abstract: A nanoimprinting master template is an ultraviolet-transparent substrate, like fused quartz, with a metallic layer having silicon dioxide pillars extending from the metallic layer and an optional silicon dioxide film on the pillars and on regions of the metallic layer between the pillars. The pillars have a generally rectangular shape and are arranged as a pattern of radial spokes and concentric rings.

Abstract: The disclosure relates generally to a method for fabricating a patterned medium. The method includes providing a substrate with an exterior layer under a lithographically patterned surface layer, the lithographically patterned surface layer comprising a first pattern in a first region and a second pattern in a second region, applying a first masking material over the first region, transferring the second pattern into the exterior layer in the second region, forming self-assembled block copolymer structures over the lithographically patterned surface layer, the self-assembled block copolymer structures aligning with the first pattern in the first region, applying a second masking material over the second region, transferring the polymer block pattern into the exterior layer in the first region, and etching the substrate according to the second pattern transferred to the exterior layer in the second region and the polymer block pattern transferred to the exterior layer in the first region.

Abstract: A system, method and apparatus for manufacturing high density magnetic media is disclosed. A flexible mold having a very low modulus of less than about 4 GPa is made on a rigid support. The mold nano-imprints a resist material on disks for hard disk drives. The flexible mold may comprise a perfluoropolyether with urethane acrylate end groups with a low surface adhesion from which the cured resist is easily released.

Abstract: A method for making a film of core-shell nanoparticles generally uniformly arranged on a substrate uses atomic layer deposition (ALD) to form the shells. The nanoparticle cores are placed in a solution containing a polymer having an end group for attachment to the cores. The solution is then applied to a substrate and allowed to dry, resulting in the nanoparticle cores being uniformly arranged by the attached polymer chains. ALD is then used to grow the shell material on the cores, using two precursors for the shell material that are non-reactive with the polymer. The polymer chains also form between the cores and the substrate surface, so the ALD forms shell material completely surrounding the cores. The uniformly arranged core-shell nanoparticles can be used as an etch mask to etch the substrate.

Abstract: A system, method and apparatus for manufacturing high density magnetic media is disclosed. A flexible mold having a very low modulus of less than about 4 GPa is made on a rigid support. The mold nano-imprints a resist material on disks for hard disk drives. The flexible mold may comprise a perfluoropolyether with urethane acrylate end groups with a low surface adhesion from which the cured resist is easily released.

Abstract: A method for making an imprint mold uses sidewall spacer line doubling, but without the need to transfer the sidewall spacer patterns into the mold substrate. A base layer is deposited on the mold substrate, followed by deposition and patterning of a mandrel layer into stripes with tops and sidewalls. A layer of spacer material is deposited on the tops and sidewalls of the mandrel stripes and on the base layer between the mandrel stripes. The spacer material on the tops of the mandrel stripes and on the base layer between the mandrel stripes is then removed. The mandrel stripes are then etched away, leaving stripes of sidewall spacer material on the base layer. The resulting mold is a substrate with pillars of sidewall spacer material patterned as stripes and extending from the substrate, with the sidewall spacers serving as the mold features for imprinting.

Abstract: A magnetic write head for data recording having a magnetic write pole with a stepped magnetic shell structure that defines a secondary flare point. The secondary flare point defined by the magnetic shell portion can be more tightly controlled with respect to its distance from the air bearing surface (ABS) of the write head than can a traditional flare point that is photolithographically on the main pole structure. This allows the effective flare point of the write head to be moved much closer to the ABS than would otherwise be possible using currently available tooling and photolithography techniques. The write head also includes a non-magnetic spacer layer formed over the magnetic shell structure that is recessed from the ABS by a distance that is greater than that of the magnetic shell portion. A magnetic shield is formed over the magnetic shell and non-magnetic spacer.

Abstract: A method for making a film of core-shell nanoparticles generally uniformly arranged on a substrate uses atomic layer deposition (ALD) to form the shells. The nanoparticle cores are placed in a solution containing a polymer having an end group for attachment to the cores. The solution is then applied to a substrate and allowed to dry, resulting in the nanoparticle cores being uniformly arranged by the attached polymer chains. ALD is then used to grow the shell material on the cores, using two precursors for the shell material that are non-reactive with the polymer. The polymer chains also form between the cores and the substrate surface, so the ALD forms shell material completely surrounding the cores. The uniformly arranged core-shell nanoparticles can be used as an etch mask to etch the substrate.

Abstract: A method for making a nanoimprinting master template uses a metallic etch stop layer for two etching steps. A layer of silicon dioxide is deposited on the etch stop layer and a first resist pattern of either concentric rings or radial spokes is formed on the silicon dioxide layer. The exposed silicon dioxide layer is etched down to the etch stop layer and the resist removed to expose a pattern of silicon dioxide rings or spokes on the etch stop layer. A second resist pattern of rings (if spokes were the first pattern) or spokes (if rings were the first pattern) is formed over the silicon dioxide rings or spokes and the etch stop layer. The exposed silicon dioxide is etched down to the etch stop layer and the resist removed to expose a pattern of silicon dioxide pillars on the etch stop layer.

Abstract: Methods for fabricating a device component are provided. A substrate comprising a RIE stop layer, an oxide layer formed on the RIE stop layer, and a RIE-able layer formed on the oxide layer may be provided. A resist layer may be patterned on the RIE-able layer. A metal layer may be formed on portions of the RIE-able layer that are not covered by the resist layer. The resist layer may be removed and an RIE performed to remove exposed portions of the RIE-able layer and portions of the oxide layer beneath the exposed portions of the RIE-able layer. Thereafter, the metal layer may be removed, and the component may be formed in an opening in the oxide layer formed during the RIE.

Abstract: The disclosure relates generally to a method for fabricating a patterned medium. The method includes providing a substrate with an exterior layer under a lithographically patterned surface layer, the lithographically patterned surface layer comprising a first pattern in a first region and a second pattern in a second region, applying a first masking material over the first region, transferring the second pattern into the exterior layer in the second region, forming self-assembled block copolymer structures over the lithographically patterned surface layer, the self-assembled block copolymer structures aligning with the first pattern in the first region, applying a second masking material over the second region, transferring the polymer block pattern into the exterior layer in the first region, and etching the substrate according to the second pattern transferred to the exterior layer in the second region and the polymer block pattern transferred to the exterior layer in the first region.

Abstract: A magnetic write head for data recording having a magnetic write pole with a stepped magnetic shell structure that defines a secondary flare point. The secondary flare point defined by the magnetic shell portion can be more tightly controlled with respect to its distance from the air bearing surface (ABS) of the write head than can a traditional flare point that is photolithographically on the main pole structure. This allows the effective flare point of the write head to be moved much closer to the ABS than would otherwise be possible using currently available tooling and photolithography techniques. The write head may also include a magnetic trailing shield that wraps around the main pole portion. The trailing shield can have a hack edge defining a trailing shield throat height that is either between the secondary flare point or coincident or behind the secondary flare point, depending on design requirements.