Abstract: A chirped grating surface emitting distributed feedback semiconductor laser device (10) includes a P-side ohmic contact (28) and an N-side ohmic contact (36). A potential difference is applied across these contacts to create an electric field that induces a stimulated emission of coherent photon radiation. The coherent photon radiation produced by the stimulated emission process is incident upon a linearly varying, second order chirped grating surface (29). An output beam, directed normal to a chemically etched output window (38), is produced by a first order diffraction of photon radiation from the chirped grating surface (29). The output beam has a non-uniform longitudinal mode near-field output intensity profile and a non-abrupt longitudinal mode near-field phase, both due to a reduced destructive interference interaction in a second order diffraction of photon radiation along the grating surface (29). The output beam also has a desired single lobed longitudinal mode far-field output intensity profile.

Abstract: An apparatus 10 for exposing a chirped grating pattern of monochromatic light on a photoresist coated semiconductor wafer 12 includes an argon gas laser 14 that outputs a monochromatic light beam 16. This monochromatic light beam 16 is filtered and collimated to produce a monochromatic light beam with a planar wavefront 24. A portion of this planar wavefront passes through a cylindrical lens 26 and a first baffle slit 30, producing a cylindrical wavefront 34 that is incident upon a hypotenuse face 38 of a right angle prism 40. Another portion of the planar wavefront passes through a second baffle slit 32, producing a smaller planar wavefront 36 that is also incident upon the hypotenuse face 38 of the right angle prism 40. A destructive interference between a reflected cylindrical wavefront 92 and a direct planar wavefront 90 inside the prism 40 produces a chirped grating pattern of monochromatic light on an adjacent prism face 42.

Abstract: Method of bonding a chip to a Cu heat sink comprises depositing a layer of Ni upon the sink, depositing a layer of Pt over the NI, and thereafter annealing the sink in a partial vacuum containing a reducing gas. After the annealing step, a metallic wetting layer of Au and a layer of In are sequentially deposited upon the Pt, and the chip is soldered to the heat sink by means of a flux free soldering process. The pure Pt is very dense and stable, does not have microholes therein which would otherwise allow the Cu ions to penetrate the Pt. For a BeO heat sink, a Ti layer is deposited over the sink rather than Ni, and a layer of Pt is thereafter deposited over the Ti layer. The Ti, Pt and BeO interact to form a good bond of high thermal conductivity, which also blocks ion migration upwardly toward the solder and the electronic chip.

Abstract: An element is soldered to a heat sink by a flux-free technique in which flux-free solder is first deposited onto the heat sink surface, then the element is placed into position on the surface, then the heat sink is placed into and held at a constant temperature in a pressure controlled chamber to a level below the melting point of the solder while undergoing a plurality of cycles of introduction and purging of an oxygen stripping gas.