Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

Abstract: A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

Abstract: According to embodiments, an electric field sensor having a sensor electrode is constructed of an electrically conductive material and having one or more outwardly protruding pillars. A screen electrode overlies the sensor electrode and has one or more openings which register with the one or more pillars on the sensor electrode. At least one piezoelectric actuator is connected to the screen electrode so that, when excited by a voltage signal, the piezoelectric actuator modulates the screen electrode toward and away from the sensor electrode at the frequency of the periodic voltage signal. An output circuit configured to detect a voltage, a current output, or both, between the sensor electrode and the screen electrode which is proportional in magnitude to the strength of the electric field.

Abstract: A method of making a memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

Abstract: A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

Abstract: According to embodiments, an electric field sensor having a sensor electrode is constructed of an electrically conductive material and having one or more outwardly protruding pillars. A screen electrode overlies the sensor electrode and has one or more openings which register with the one or more pillars on the sensor electrode. At least one piezoelectric actuator is connected to the screen electrode so that, when excited by a voltage signal, the piezoelectric actuator modulates the screen electrode toward and away from the sensor electrode at the frequency of the periodic voltage signal. An output circuit configured to detect a voltage, a current output, or both, between the sensor electrode and the screen electrode which is proportional in magnitude to the strength of the electric field.

Abstract: A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

Abstract: Method and apparatus for a piezoelectric apparatus are provided. In some embodiments, a method for fabricating a piezoelectric device may include etching a series of vertical trenches in a top substrate portion, depositing a first continuous conductive layer over the trenches and substrate, depositing a continuous piezoelectric layer over the first continuous conductive layer such that the piezoelectric material has trenches and sidewalls, depositing a second continuous conductive layer over the continuous piezoelectric layer, etching through the vertical trenches of the first continuous conductive layer, continuous piezoelectric layer, second continuous conductive layer, and top substrate portion into a bottom substrate portion, etching a series of horizontal trenches in the bottom substrate portion such that the horizontal trenches and vertical trenches occupy a continuous free space and allow movement of a piezoelectric MEMS device created by the above method in three dimensions.

Abstract: A binary bi-phase shift modulator having an input piezoelectric transducer and an output piezoelectric transducer connected in series between a radio frequency input and a radio frequency output. A fixed DC pole voltage having a first polarity is connected to one of the transducers. A DC switched pole voltage is connected to the other transducer which switches between the pole voltage of the first polarity and a pole voltage of the opposite polarity in accordance with a binary data signal. The polarity of the radio frequency input relative to the radio frequency output varies as a function of the polarity of the DC switched pole voltage.

Abstract: A binary bi-phase shift modulator having an input piezoelectric transducer and an output piezoelectric transducer connected in series between a radio frequency input and a radio frequency output. A fixed DC pole voltage having a first polarity is connected to one of the transducers. A DC switched pole voltage is connected to the other transducer which switches between the pole voltage of the first polarity arid a pole voltage of the opposite polarity m accordance with a dinar data signal The polarity of the radio frequency input relative to the radio frequency output varies as a function of the polarity of the DC switched pole voltage.

Abstract: A nano/micro electro-mechanical relay, comprising an at least one normally open (NO) nano/micro relay switch and an at least one normally closed (NC) nano/micro relay switch. Both the NC nano/micro relay switch and the NO nano/micro relay switch can be switched between their respective normal relay switch positions and their respective actuated relay switch positions. An at least one nano/micro actuator including an at least one piezoelectric stack layer being attached to an at least one elastic layer, wherein the at least one piezoelectric stack layer contracts to deflect the at least one elastic layer, and thereby actuate the at least one nano/micro contact bar to simultaneously switch the NC nano/micro relay switch and the NO nano/micro relay switch between their respective normal relay switch position and their respective actuated relay switch positions.

Abstract: An electrostatic ohmic shunt radio frequency (RF) microelectromechanical system (MEMS) switch and method of manufacturing includes a co-planar waveguide (CPW) transmission line comprising a plurality of slots and a plurality of pillars, wherein a space between successive ones of the plurality of pillars is defined by one of the plurality of slots; a plurality of electrodes positioned in the slots; a conductive contact beam elevated over the CPW transmission line and the plurality of electrodes; and a plurality of conductive contact dimples positioned between the conductive contact beam and the CPW transmission line, wherein the plurality of pillars are adapted to prevent physical contact between the plurality of electrodes and the conductive contact beam.

Abstract: A nano/micro electro-mechanical relay, comprising an at least one normally open (NO) nano/micro relay switch and an at least one normally closed (NC) nano/micro relay switch. Both the NC nano/micro relay switch and the NO nano/micro relay switch can be switched between their respective normal relay switch positions and their respective actuated relay switch positions. An at least one nano/micro actuator including an at least one piezoelectric stack layer being attached to an at least one elastic layer, wherein the at least one piezoelectric stack layer contracts to deflect the at least one elastic layer, and thereby actuate the at least one nano/micro contact bar to simultaneously switch the NC nano/micro relay switch and the NO nano/micro relay switch between their respective normal relay switch position and their respective actuated relay switch positions.

Abstract: An electrostatic ohmic shunt radio frequency (RF) microeleetromechanical system (MEMS) switch and method of manufacturing includes a co-planar waveguide (CPW) transmission line comprising a plurality of slots and a plurality of pillars, wherein a space between successive ones of the plurality of pillars is defined by one of the plurality of slots; a plurality of electrodes positioned in the slots; a conductive contact beam elevated over the CPW transmission line and the plurality of electrodes; and a plurality of conductive contact dimples positioned between the conductive contact beam and the CPW transmission line, wherein the plurality of pillars are adapted to prevent physical contact between the plurality of electrodes and the conductive contact beam.

Abstract: A MEMS magnetometer comprises a deflectable resonator comprising a base layer; a Lorentz force (LF) drive conductor attached to the base layer; and a piezoelectric sensor attached to the base layer and electrically isolated from the LF drive conductor. The LF drive conductor comprises conductive material configured for receiving a current at a mechanical resonant frequency of the device capable of causing mechanical deformation of the deflectable resonator, wherein the current causes formation of Lorentz forces in a presence of a magnetic field, and wherein the deflectable resonator is mechanically deformed as a result of the formation of the Lorentz forces. The mechanical deformation of the deflectable resonator generates a detectable piezoelectric electrical signal that is proportional to the magnitude of the magnetic field.

Abstract: A microelectromechanical system (MEMS) switch comprising a radio frequency (RF) transmission line; a structurally discontinuous RF conductor adjacent to the RF transmission line; a pair of cantilevered piezoelectric actuators flanking the RF conductor; a contact pad connected to the pair of cantilevered piezoelectric actuators; a pair of cantilevered structures connected to the RF conductor; a plurality of air bridges connected to the pair of cantilevered piezoelectric actuators; and a plurality of contact dimples on the contact pad. Preferably, the RF transmission line comprises a pair of co-planar waveguide ground planes flanking the RF conductor; and a plurality of ground straps connected to the pair of co-planar waveguide ground planes, wherein the RF transmission line is operable to provide a path along which RF signals propagate.

Abstract: A MEMS switch and method of fabrication comprises a RF transmission line; a RF beam structure comprising a RF conductor; a cantilevered piezoelectric actuator coupled to the RF beam structure; a plurality of air bridges connected to the cantilevered piezoelectric actuator; and a plurality of contact dimples on the pair on the RF beam structure. The RF transmission line comprises a pair of co-planar waveguide ground planes flanking the RF conductor; and a plurality of ground straps, wherein the RF transmission line is operable to provide a path along which RF signals propagate. The cantilevered piezoelectric actuator comprises a dielectric layer connected to the RF beam structure; a bottom electrode connected to the dielectric layer; a top electrode; and a piezoelectric layer in between the top and bottom electrodes, wherein the top electrode is offset from an edge of the piezoelectric layer and the bottom electrode.

Abstract: A MEMS device comprising a substrate; an anchored end connected to the substrate; and an actuator comprising a first electrode; a piezoelectric layer over the first electrode; and multiple sets of second electrodes over the piezoelectric layer, wherein each of the sets of second electrodes being defined by a transverse gap there between, and wherein one of the sets of second electrodes are actuated asymmetrically with respect to a first plane resulting in a piezoelectrically induced bending moment arm in a lateral direction that lies in a second plane. The device further comprises an end effector opposite to the anchored end and connected to the actuator; a ferromagnetic core support structure connected to the end effector; a movable ferromagnetic inductor core on top of the ferromagnetic core support structure; and a MEMS inductor coiled around the ferromagnetic core support structure and the movable ferromagnetic inductor core.

Abstract: A microelectromechanical system (MEMS) device comprises a substrate; an anchored end connected to the substrate; a free end comprising an end effector opposite to the anchored end; a spring attached to the end effector; multiple actuation beams; multiple connection beams adapted to connect the multiple actuation beams to one another; and an actuator/sensor comprising a first electrode; a piezoelectric layer over the first electrode; and a set of second electrodes over the piezoelectric layer, wherein the set of second electrodes being defined by a transverse gap therebetween. Each of the multiple actuation beams comprises two sets of the second electrodes. The set of second electrodes comprise an extensional electrode and a contraction electrode. One of the sets of second electrodes is actuated asymmetrically with respect to a first plane resulting in a piezoelectrically induced bending moment arm in a lateral direction that lies in a second plane.