Abstract: Laminated structures comprise a metal sheet including a first face and a second face with a thickness of from about 0.5 mm to about 2 mm extending between the first face and the second face. The laminated structure further includes a first chemically strengthened glass sheet including a thickness of less than or equal to about 1.1 mm and a first interlayer attaching the first chemically strengthened glass sheet to the first face of the metal sheet. In further examples, methods of manufacturing a laminated structure comprise the steps of laminating with a metal sheet and a first chemically strengthened glass sheet together with an interlayer.

Abstract: Laminated structures comprise a metal sheet including a first face and a second face with a thickness of from about 0.5 mm to about 2 mm extending between the first face and the second face. The laminated structure further includes a first chemically strengthened glass sheet including a thickness of less than or equal to about 1.1 mm and a first interlayer attaching the first chemically strengthened glass sheet to the first face of the metal sheet. In further examples, methods of manufacturing a laminated structure comprise the steps of laminating with a metal sheet and a first chemically strengthened glass sheet together with an interlayer.

Abstract: A glass laminate structure comprising an external glass sheet and an internal glass sheet wherein one or both of the glass sheets comprises SiO2+B2O3+Al2O3?86.5 mol. %. and R2O—RO—Al2O3<about 5 mol. %. Exemplary glass sheet can comprise between about 69-80 mol. % SiO2, between about 6-12 mol. % Al2O3, between about 2-10 mol. % B2O3, between about 0-5 mol. % ZrO2, Li2O, MgO, ZnO and P2O5, between about 6-15 mol. % Na2O, between about 0-3 mol. % K2O and CaO, and between about 0-2 mol. % SnO2 to provide a mechanically robust and environmentally durable structure.

Abstract: A thin lightweight glass fascia for appliances. The fascia may be a seamless shaped glass fascia for an appliance, such as a glass fascia that wraps around at least two opposing edges of an appliance. The glass fascia may seamlessly incorporate a display or control panel under the fascia. A mounting arrangement that facilitates quick fascia removal and replacement may be provided. The fascia may be a chemically-strengthened glass sheet having a thickness of less than 2.0 mm, and a near-surface region under a compressive stress, wherein the compressive stress (CS) at a surface of the first glass sheet is greater than 300 MPa and extends to a depth of layer of at least 20 micrometers.

Abstract: A glass laminate structure comprising an external glass sheet and an internal glass sheet wherein one or both of the glass sheets comprises SiO2+B2O3+Al2O3?86.5 mol. %. and R2O—RO—Al2O3< about 5 mol. %. Exemplary glass sheet can comprise between about 69-80 mol. % SiO2, between about 6-12 mol. % Al2O3, between about 2-10 mol. % B2O3, between about 0-5 mol. % ZrO2, Li2O, MgO, ZnO and P2O5, between about 6-15 mol. % Na2O, between about 0-3 mol. % K2O and CaO, and between about 0-2 mol. % SnO2 to provide a mechanically robust and environmentally durable structure.

Abstract: Laminated structures comprise a metal sheet including a first face and a second face with a thickness of from about 0.5 mm to about 2 mm extending between the first face and the second face. The laminated structure further includes a first chemically strengthened glass sheet including a thickness of less than or equal to about 1.1 mm and a first interlayer attaching the first chemically strengthened glass sheet to the first face of the metal sheet. In further examples, methods of manufacturing a laminated structure comprise the steps of laminating with a metal sheet and a first chemically strengthened glass sheet together with an interlayer.

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract: Methods and apparatus provide for performing an ion exchange process by immersing a glass sheet into a molten salt bath at one or more first temperatures for a first period of time such that ions within the glass sheet proximate to a surface thereof are exchanged for larger ions from the molten salt bath, thereby producing: (i) an initial compressive stress (iCS) at the surface of the glass sheet, (ii) an initial depth of compressive layer (iDOL) into the glass sheet, and (iii) an initial central tension (iCT) within the glass sheet; and annealing the glass sheet, after the ion exchange process has been completed, by elevating the glass sheet to one or more second temperatures for a second period of time such that at least one of the initial compressive stress (iCS), the initial depth of compressive layer (iDOL), and the initial central tension (iCT) are modified.

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract: A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract: A thin lightweight glass fascia for appliances. The fascia may be a seamless shaped glass fascia for an appliance, such as a glass fascia that wraps around at least two opposing edges of an appliance. The glass fascia may seamlessly incorporate a display or control panel under the fascia. A mounting arrangement that facilitates quick fascia removal and replacement may be provided. The fascia may be a chemically-strengthened glass sheet having a thickness of less than 2.0 mm, and a near-surface region under a compressive stress, wherein the compressive stress (CS) at a surface of the first glass sheet is greater than 300 MPa and extends to a depth of layer of at least 20 micrometers.

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

Abstract: Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X-and Y-axial directions.