Abstract: Provided are processes for enhancing the resolution of a thermally transferred pattern on an imaged thermal transfer receiver, wherein the imaged thermal transfer receiver comprises a surface having an exposed portion and a non-exposed portion of one or more thermally transferred layer(s), comprising: (a) contacting said surface with an adhesive layer for a contact period to provide a laminate; (b) separating said adhesive layer from the laminate to provide a treated thermal transfer receiver having a surface substantially free of said non-exposed portion of one or more thermally transferred layer(s). The processes are useful in the fabrication of electronic devices including thin film transistors, circuits, electromagnetic interference shields, touchpad sensors and other electronic devices.

Abstract: Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

Abstract: Disclosed is a method negative imaging method for making a metal pattern with high conductivity comprising providing a patterned substrate comprising a patterned catalyst layer on a base substrate by a thermal imaging method followed by plating to provide the metal pattern. The metal patterns provided are suitable for electrical devices including electromagnetic interference shielding devices and touchpad sensors.

Abstract: Two or more sets of non-contiguous features are selected from a pattern of non-contiguous features, and each set is imaged separately during a single scan of a multi-channel imaging head. The non-contiguous features selected in each set can be selected such that they are imaged with substantially the same transferred characteristics. The non-contiguous features selected in all the sets can be selected such that the pattern is completely imaged after all of the sets have been separately imaged, and each imaged non-contiguous feature in the completely imaged pattern has substantially the same imaged characteristics. The one or more sets can be selected such that the selected non-contiguous features of one set are interleaved with the selected non-contiguous features of another set.

Abstract: The invention provides metal compositions, including silver compositions, and thermal imaging donors prepared with the compositions. The donors are useful for thermal transfer patterning of a metal layers and optionally, a corresponding proximate portion of an additional transfer layer onto a thermal imaging receiver. The compositions are useful for dry fabrication of electronic devices. Also provided are patterned multilayer compositions comprising one or more base film(s), and one or more patterned metal layers, including EMI shields and touchpad sensors.

Abstract: The invention provides metal compositions, including silver compositions, and thermal imaging donors prepared with the compositions. The donors are useful for thermal transfer patterning of a metal layers and optionally, a corresponding proximate portion of an additional transfer layer onto a thermal imaging receiver. The compositions are useful for dry fabrication of electronic devices. Also provided are patterned multilayer compositions comprising one or more base film(s), and one or more patterned metal layers, including EMI shields and touchpad sensors.

Abstract: The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Abstract: The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Abstract: Disclosed is a method negative imaging method for making a metal pattern with high conductivity comprising providing a patterned substrate comprising a patterned catalyst layer on a base substrate by a thermal imaging method followed by plating to provide the metal pattern. The metal patterns provided are suitable for electrical devices including electromagnetic interference shielding devices and touchpad sensors.

Abstract: Provided are processes for making a transparent conducting pattern. The invention is also directed to electronic devices containing such transparent conducting patterns. Further provided is a substrate comprising a base film and a transparent conducting layer disposed on the base film; wherein the substrate has an OD of about 0.1 to 0.6 at 830 nm, and the transparent conducting layer comprises polyethylene dioxythiophene and has an OD of less than 0.1 in the range of 400 to 700 nm.

Abstract: Anisotropic conductive coatings and electronic devices made using the coatings are provided. The anisotropic conductive coatings are particularly useful in electronic devices that contain flexible substrates.

Abstract: Provided are processes for enhancing the resolution of a thermally transferred pattern on an imaged thermal transfer receiver, wherein the imaged thermal transfer receiver comprises a surface having an exposed portion and a non-exposed portion of one or more thermally transferred layer(s), comprising: (a) contacting said surface with an adhesive layer for a contact period to provide a laminate; (b) separating said adhesive layer from the laminate to provide a treated thermal transfer receiver having a surface substantially free of said non-exposed portion of one or more thermally transferred layer(s). The processes are useful in the fabrication of electronic devices including thin film transistors, circuits, electromagnetic interference shields, touchpad sensors and other electronic devices.

Abstract: The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Abstract: The invention provides metal compositions, including silver compositions, and thermal imaging donors prepared with the compositions. The donors are useful for thermal transfer patterning of a metal layers and optionally, a corresponding proximate portion of an additional transfer layer onto a thermal imaging receiver. The compositions are useful for dry fabrication of electronic devices. Also provided are patterned multilayer compositions comprising one or more base film(s), and one or more patterned metal layers, including EMI shields and touchpad sensors.

Abstract: A method is described for producing thin semiconductor films on a substrate by contacting a substrate with a solution containing a metal salt, a source of a Group VIa element, and chelating agent, and a noble metal in its elemental form. The resulting semiconductor films are useful for electronic and photovoltaic applications.

Abstract: The present invention is a process for transfer of a pattern of material from a donor substrate to a receiver substrate by lamination. The pattern of the transferred material is defined by an aperture in a mask interposed between the donor and receiver during lamination. The technique is compatible with flexible polymer receiver substrates and is useful in fabricating thin film transistors for flexible displays.

Abstract: Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

Abstract: This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.

Abstract: An infrared laser is used to irradiate a sample, which preferably comprises a substrate, onto which an opaque basecoat is applied, which basecoat in turn is coated with a clearcoat. The laser pulse photoablates the basecoat at an interface between the basecoat and the clearcoat, and a blister forms in the clearcoat due to an increase in pressure from the ablation. The irradiation can be done a number of times on fresh areas of the sample and with increased laser energy. A critical energy value is determined which is the energy where a crack begins to propagate from the blister formed. Another laser is used to measure the amount of light reflected off the top surface of the blister which passes through the middle of an aperture. These values, along with others such as the size of the blister and the modulus of the clearcoat, are used to determine the adhesion strength at the interface of the basecoat and clearcoat.