Abstract: Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.

Abstract: Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.

Abstract: A multilayer structure for use in forming a transistor which may be suitable for high temperature applications is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cubic boron nitride is epitaxially grown using laser ablation techniques and provides an electrically resistive and thermally conductive barrier. An active layer of epitaxial silicon is then grown from the layer of cubic boron nitride, such that the overlaying layer of epitaxial silicon is in crystallographic registry with the layer of boron nitride which is in crystallographic registry with the underlying silicon substrate. Appropriately doped source and drain regions and a gate electrode are provided to form the transistor.

Abstract: A multilayer structure for use in forming a transistor which may be suitable for high temperature applications is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cubic boron nitride is epitaxially grown using laser ablation techniques and provides an electrically resistive and thermally conductive barrier. An active layer of epitaxial silicon is then grown from the layer of cubic boron nitride, such that the overlaying layer of epitaxial silicon is in crystallographic registry with the layer of boron nitride which is in crystallographic registry with the underlying silicon substrate. Appropriately doped source and drain regions and a gate electrode are provided to form the transistor.

Abstract: Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.

Abstract: Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.

Abstract: A method for forming a transistor which may be suitable for high temperature application is provided. A single crystal silicon substrate has an overlaying layer of epitaxially grown cubic boron nitride in crystallographic registry with the silicon substrate. The cubic boron nitride is epitaxially grown using laser ablation techniques and provides an electrically resistive and thermally conductive barrier. An active layer of epitaxial silicon is then grown from the layer of cubic boron nitride, such that the overlaying layer of epitaxial silicon is in crystallographic registry with the layer of boron nitride which is in crystallographic registry with the underlying silicon substrate. Appropriately doped source and drain regions and a gate electrode are provided to form the transistor.

Abstract: Fine line superconductors of yttrium-barium-copper were formed on <100> strontium titanate substrates by the completely non-vacuum techniques of metallo-organic deposition in selective laser pyrolysis. Lines 125 micrometers wide were written in a film of metal neodecanoates, using an argon laser, prior to complete pyrolysis. An organic dye which absorbs selective laser light wavelengths, is added to the metallo-organic solution comprising the metal neodecanoates prior to laser exposure, so as to enhance absorption of the laser light at the regions of the metallo-organic film which are subsequently exposed to the laser light. The increased light absorbance at the exposed regions, results in at least partial pyrolysis of the exposed metal neodecanoates. Regions of the metallo-organic film not exposed to laser pyrolysis is developed away using a xylene wash.

Abstract: A method of measuring the velocity of a fluid by noninstrusive means comprises passing a pump laser beam pulse through the fluid wherein the fluid contains a constituent absorbing the wavelength of the laser so that a temperature gradient, and therefore an index of refraction gradient, occurs in the laser beam path; and a probe laser beam is passed transverse to the pump laser beam and is deflected by the heated portion of the fluid; measuring the beam deflection and calculating from that the fluid velocity. After the pump pulse the amount of deflection reaches a peak value and then decreases at a rate independent of the concentration of the absorbing constituent. Where the pump laser beam has a Gaussian spatial profile, the deflection signal decreases according to: exp-2(v+/a).sup.2, where v is the velocity; t is time; and a is a constant representing the pump laser beam radius.

Abstract: A method of measuring the velocity of a fluid by nonintrusive means comprises passing a pulsed pump laser beam through the fluid wherein the fluid contains a constituent absorbing the wavelength of the laser so that a temperature gradient, and therefore an index of refraction gradient, occurs in the laser beam path; and a probe laser beam is passed transversely to the pump laser beam and is deflected by the heated portion of the fluid by an amount which is proportional to the concentration of the absorbing constituent and inversely proportional to the velocity of the fluid; measuring the beam deflection and calculating from that the fluid velocity, if the concentration of the absorbing constituent is known, or calculating the relative velocity if the concentration of the absorbing constituent is constant.

Abstract: A previously unlit tungsten filament bulb with a fill gas is flashed for about one second to form a dispersion of tungsten oxide particles therein. In a preferred embodiment, a laser beam is passed through the dispersion and the scattered light is detected to provide a measure of the oxygen content of the bulb.

Abstract: A method of self-pressurizing a piston-and-rod hydraulic damper by providing at least two gas-generating reactants in the damper's reservoir which reactants are separated one from the other by a temporary barrier. The barrier is subsequently removed, after the damper is filled and sealed, so as to permit the reactants to combine and generate the pressurizing gas. A capsule containing both reactants and a meltable barrier is disclosed.