Patents by Inventor Jeffrey Shealy

Jeffrey Shealy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage GaN-based transistor structure
    Patent number: 7459356
    Abstract: The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.
    Type: Grant
    Filed: February 23, 2006
    Date of Patent: December 2, 2008
    Assignee: RF Micro Devices, Inc.
    Inventors: Joseph Smart, Brook Hosse, Shawn Gibb, David Grider, Jeffrey Shealy
  • Surface passivation of GaN devices in epitaxial growth chamber
    Patent number: 7408182
    Abstract: The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.
    Type: Grant
    Filed: April 4, 2006
    Date of Patent: August 5, 2008
    Assignee: RF Micro Devices, Inc.
    Inventors: Joseph Smart, David Grider, Shawn Gibb, Brook Hosse, Jeffrey Shealy
  • Surface passivation of GaN devices in epitaxial growth chamber
    Patent number: 7052942
    Abstract: The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.
    Type: Grant
    Filed: October 20, 2003
    Date of Patent: May 30, 2006
    Assignee: RF Micro Devices, Inc.
    Inventors: Joseph Smart, David Grider, Shawn Gibb, Brook Hosse, Jeffrey Shealy
  • High voltage GaN-based transistor structure
    Patent number: 7026665
    Abstract: The present invention relates to a high voltage and high power gallium nitride (GaN) transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that serves to prevent injection of electrons into a substrate during high voltage operation, thereby improving performance of the GaN transistor structure during high voltage operation. Preferably, the sub-buffer layer is aluminum nitride, and the GaN transistor structure further includes a transitional layer, a GaN buffer layer, and an aluminum gallium nitride Schottky layer.
    Type: Grant
    Filed: October 20, 2003
    Date of Patent: April 11, 2006
    Assignee: RF Micro Devices, Inc.
    Inventors: Joseph Smart, Brook Hosse, Shawn Gibb, David Grider, Jeffrey Shealy